公开(公告)号：GB2603346B

公开(公告)日：2023-12-20

申请号：GB202204025

申请日：2020-08-14

Applicant: IBM

Inventor： NICHOLAS ANTHONY LANZILLO ,  HOSADURGA SHOBHA ,  HUAI HUANG ,  JUNLI WANG ,  KOICHI MOTOYAMA ,  CHRISTOPHER PENNY ,  LAWRENCE CLEVENGER

IPC: H01L21/768

Abstract: Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterning a trench(es) in a dielectric having a V-shaped profile with a rounded bottom; depositing a liner into the trench(es) using PVD which opens-up the trench(es) creating a trapezoidal-shaped profile in the trench(es); removing the liner from the trench(es) selective to the dielectric whereby, following the removing, the trench(es) having the trapezoidal-shaped profile remains in the dielectric; depositing a conformal barrier layer into and lining the trench(es) having the trapezoidal-shaped profile; depositing a conductor into and filling the trench(es) having the trapezoidal-shaped profile over the conformal barrier layer; and polishing the conductor and the conformal barrier layer down to the dielectric. An interconnect structure is also provided.

公开(公告)号：GB2603346A

公开(公告)日：2022-08-03

申请号：GB202204025

申请日：2020-08-14

Applicant: IBM

Inventor： NICHOLAS ANTHONY LANZILLO ,  HOSADURGA SHOBHA ,  HUAI HUANG ,  JUNLI WANG ,  KOICHI MOTOYAMA ,  CHRISTOPHER PENNY ,  LAWRENCE CLEVENGER

IPC: H01L21/768

Abstract: Techniques for forming trapezoidal-shaped interconnects are provided. In one aspect, a method for forming an interconnect structure includes: patterning a trench(es) in a dielectric having a V-shaped profile with a rounded bottom; depositing a liner into the trench(es) using PVD which opens-up the trench(es) creating a trapezoidal-shaped profile in the trench(es); removing the liner from the trench(es) selective to the dielectric whereby, following the removing, the trench(es) having the trapezoidal-shaped profile remains in the dielectric; depositing a conformal barrier layer into and lining the trench(es) having the trapezoidal-shaped profile; depositing a conductor into and filling the trench(es) having the trapezoidal-shaped profile over the conformal barrier layer; and polishing the conductor and the conformal barrier layer down to the dielectric. An interconnect structure is also provided.

公开(公告)号：GB2555269A

公开(公告)日：2018-04-25

申请号：GB201718865

申请日：2016-05-27

Applicant: IBM

Inventor： BENJAMIN DAVID BRIGGS ,  MICHAEL RIZZOLO ,  LAWRENCE CLEVENGER ,  KOICHI MOTOYAMA

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: After forming a trench opening (52) including narrow trench portions (52A) spaced apart by wide trench portions (52B) and forming a stack of a first diffusion barrier layer (62) and a first liner layer (64) on sidewalls and a bottom surface of the trench opening (52), a reflow process is performed to fill the narrow trench portions (52A) but not the wide trench portions (52B) with a first conductive material layer (66). A stack of a second diffusion barrier layer (72) and a second liner layer (74) is formed on portions of the first liner layer (64) and ends of the first conductive material layer (66) exposed by the wide trench portions (52B). A second conductive material layer (76) is deposited to fill the wide trench portions (52B). Portions of the second diffusion barrier layer (72) and the second liner layer (74) located between the first conductive material layer (66) and the second conductive material layer (76) act as vertical blocking boundaries to prevent the electromigration of metal atoms.