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公开(公告)号：CA2098416A1
公开(公告)日：1994-04-28
申请号：CA2098416
申请日：1993-06-15
Applicant: IBM
Inventor： FREIERMUTH PETER E , GINN KATHLEEN S , HALEY JEFFREY A , LAMAIRE SUSAN J , LEWIS DAVID A , MILLS GAVIN T , REDMOND TIMOTHY A , TSANG YUK L , VAN HORN JOSEPH J , VIEHBECK ALFRED , WALKER GEORGE F , YANG JER-MING , LONG CLARENCE S
IPC: G01R31/26 , G01R31/28 , G01R31/311 , H01L21/265 , H01L21/268 , H01L21/326 , H01L21/329 , H01L21/306 , H01L21/31 , H01L21/477 , H01L21/479 , H01L21/70
Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.
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公开(公告)号：CA2098416C
公开(公告)日：1997-05-13
申请号：CA2098416
申请日：1993-06-15
Applicant: IBM
Inventor： FREIERMUTH PETER E , GINN KATHLEEN S , HALEY JEFFREY A , LAMAIRE SUSAN J , LEWIS DAVID A , MILLS GAVIN T , REDMOND TIMOTHY A , TSANG YUK L , VAN HORN JOSEPH J , VIEHBECK ALFRED , WALKER GEORGE F , YANG JER-MING , LONG CLARENCE S
IPC: G01R31/26 , G01R31/28 , G01R31/311 , H01L21/265 , H01L21/268 , H01L21/326 , H01L21/329 , H01L21/306 , H01L21/3105 , H01L21/477 , H01L21/479 , H01L21/70
Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.
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公开(公告)号：DE69106956D1
公开(公告)日：1995-03-09
申请号：DE69106956
申请日：1991-06-11
Applicant: IBM
Inventor： CUOMO JEROME J , GELORME JEFFREY D , HATZAKIS MICHAEL , LEWIS DAVID A , SHAW JANE M , WHITEHAIR STANLEY J
Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.
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公开(公告)号：DE69106956T2
公开(公告)日：1995-08-10
申请号：DE69106956
申请日：1991-06-11
Applicant: IBM
Inventor： CUOMO JEROME J , GELORME JEFFREY D , HATZAKIS MICHAEL , LEWIS DAVID A , SHAW JANE M , WHITEHAIR STANLEY J
Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.
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