公开(公告)号：JP2006203197A

公开(公告)日：2006-08-03

申请号：JP2006007419

申请日：2006-01-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BRULEY JOHN ,  CARRUTHERS ROY A ,  LINN MARIE GIGNAC ,  HU CHAO-KUN ,  LINIGER ERIC G ,  MALHOTRA SANDRA G ,  ROSSNAGEL STEPHEN M

IPC: H01L21/768

CPC classification number: H01L21/76849 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an improved on-chip Cu interconnection that uses a metal cap having a thickness of 1 to 5 nm.
SOLUTION: There is disclosed a procedure for coating the surface of a Cu Damascene wire with an element, having a thickness of 1 to 5 nm prior to deposition of an interlayer dielectric or dielectric diffusion barrier layer. The coating brings about protection against oxidization, increases the adhesive force between Cu and the dielectric, and makes the boundary surface diffusion of Cu reduced. Further, the thin cap layer increases the electromigration lifetime of Cu and reduces the occurrence of voids induced by stress. The selected element can be directly deposited on Cu embedded in the dielectric in the lower layer, without causing short-circuiting between the Cu wires. These selected elements are selected, based on the negative high reduction potential with respect to oxygen and water, low solubility to Cu, and the compound formation with Cu.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供使用厚度为1至5nm的金属帽的改进的片上Cu互连。 解决方案：公开了在沉积层间电介质或电介质扩散阻挡层之前，用具有1至5nm厚度的元件涂覆Cu镶嵌线的表面的步骤。 该涂层具有防氧化保护作用，增加了Cu与电介质之间的粘合力，使Cu的边界表面扩散减少。 此外，薄盖层增加了Cu的电迁移寿命并且减少了由应力引起的空隙的发生。 所选择的元件可以直接沉积在嵌入下层电介质中的Cu上，而不会导致Cu线之间的短路。 这些选择的元素基于相对于氧和水的负高还原电位，对Cu的低溶解度和与Cu的化合物形成而选择。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002016070A

公开(公告)日：2002-01-18

申请号：JP2001171050

申请日：2001-06-06

Applicant: IBM

Inventor： LAWRENCE ALFRED CLEVENGER ,  RONALD JEAN PHILIPPI ,  RODBELL KENNETH PARKER ,  ROY CHARLES IGGULDEN ,  CHAOKUN FUU ,  LINN MARIE GIGNAC ,  WEBER STEPHAN ,  GAMBINO JEFFREY PETER ,  SCHNABEL RAINER FLORIAN

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a dual damascene process that can reliably form aluminum interconnection exhibiting improved electro migration characteristics, as compared with aluminum interconnection that is formed by the conventional RIE technique. SOLUTION: More specifically, the dual damascene process depends on a PVD-Ti/CVD-TiN barrier layer and forms an aluminum line showing great reduction in a saturation resistance level, the inhibition of the electro migration, or both of them especially in a line longer than 100 micrometers. The electromigration life time of the dual damascene aluminum line depends greatly on the conditions of materials and material-filling processes. When there is deviation in the materials and treatment, the electromigration life time way possibly become shorter than life time that is achieved by an aluminum RIE interconnection line, and this becomes a serious matter.