公开(公告)号：JP2002016070A

公开(公告)日：2002-01-18

申请号：JP2001171050

申请日：2001-06-06

Applicant: IBM

Inventor： LAWRENCE ALFRED CLEVENGER ,  RONALD JEAN PHILIPPI ,  RODBELL KENNETH PARKER ,  ROY CHARLES IGGULDEN ,  CHAOKUN FUU ,  LINN MARIE GIGNAC ,  WEBER STEPHAN ,  GAMBINO JEFFREY PETER ,  SCHNABEL RAINER FLORIAN

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a dual damascene process that can reliably form aluminum interconnection exhibiting improved electro migration characteristics, as compared with aluminum interconnection that is formed by the conventional RIE technique. SOLUTION: More specifically, the dual damascene process depends on a PVD-Ti/CVD-TiN barrier layer and forms an aluminum line showing great reduction in a saturation resistance level, the inhibition of the electro migration, or both of them especially in a line longer than 100 micrometers. The electromigration life time of the dual damascene aluminum line depends greatly on the conditions of materials and material-filling processes. When there is deviation in the materials and treatment, the electromigration life time way possibly become shorter than life time that is achieved by an aluminum RIE interconnection line, and this becomes a serious matter.