公开(公告)号：CA1250177A

公开(公告)日：1989-02-21

申请号：CA496973

申请日：1985-12-05

Applicant: IBM

Inventor： HULT ANDERS ,  ITO HIROSHI ,  MACDONALD SCOTT A ,  WILLSON C GRANT

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROCESS FOR PREPARING NEGATIVE RELIEF IMAGES Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.

公开(公告)号：CA1282273C

公开(公告)日：1991-04-02

申请号：CA494157

申请日：1985-10-29

Applicant: IBM

Inventor： HEFFERON GEORGE J ,  ITO HIROSHI ,  MACDONALD SCOTT A ,  WILLSON CARLTON G

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  G03F7/26

Abstract: METHOD OF CREATING PATTERNED MULTILAYER FILMS FOR USE IN PRODUCTION OF SEMICONDUCTOR CIRCUITS AND SYSTEMS A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.