公开(公告)号：EP0698230A4

公开(公告)日：1995-10-24

申请号：EP94900495

申请日：1993-10-29

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  BREYTA GREGORY ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH ,  WELSH KEVIN MICHAEL

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/16 ,  G03F7/029

CPC classification number: G03F7/039

Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.

公开(公告)号：DE69322946D1

公开(公告)日：1999-02-18

申请号：DE69322946

申请日：1993-10-15

Applicant: IBM

Inventor： BREYTA GREGORY ,  KNORS CHRISTOPHER JOHN ,  ITO HIROSHI ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/004 ,  G03F7/039 ,  C08F8/12

Abstract: The present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with acrylate, methacrylate or a mixture of acrylate and methacrylate.

公开(公告)号：DE3750937D1

公开(公告)日：1995-02-16

申请号：DE3750937

申请日：1987-06-16

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  CROCKATT DALE MURRAY ,  CHOW MING-FEA ,  FRECHET JEAN-MARIE JOSEPH ,  CONLEY WILLARD EARL ,  HEFFERSON GEORGE JOSEPH ,  ITO HIROSHI ,  IWAMOTO NANCY ELLEN ,  WILLSON CARLTON GRANT

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

公开(公告)号：DE112010004848T5

公开(公告)日：2012-09-27

申请号：DE112010004848

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  SUNDBERG LINDA KARIN ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE ,  TRUONG HOA ,  ITO HIROSHI

IPC: B81C1/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: Ein Verfahren zum Bilden einer Schichtstruktur, die eine Struktur von Bereichen eines selbstorganisierten Materials umfasst, umfasst folgende Schritte: Aufbringen einer Fotolackschicht, die einen nicht vernetzenden Fotolack umfasst, auf ein Substrat; wahlweise Aushärten der Fotolackschicht; Belichten einzelner Strukturbereiche der Fotolackschicht mit einer ersten Strahlung; wahlweise Aushärten der belichteten Fotolackschicht; und Entwickeln der belichteten Fotolackschicht mit einem nicht alkalischen Entwickler, um eine strukturierte Negativ-Fotolackschicht zu bilden, die unvernetzten entwickelten Fotolack umfasst; wobei der entwickelte Fotolack in einem bestimmten organischen Lösemittel unlöslich ist, das zum Gießen eines bestimmten Materials geeignet ist, welches zur Selbstorganisation in der Lage ist, und wobei der entwickelte Fotolack in einem wässrigen alkalischen Entwickler und/oder in einem zweiten organischen Lösemittel löslich ist. Eine Lösung, die das bestimmte Material umfasst, welches zur Selbstorganisation in der Lage und in dem bestimmten organischen Lösemittel gelöst ist, wird auf die strukturierte Fotolackschicht gegossen und das bestimmte organische Lösemittel wird entfernt. Dem gegossenen bestimmten Material wird die Möglichkeit zur Selbstorganisation gegeben, während das gegossene bestimmte Material wahlweise erwärmt und/oder getempert wird, wodurch die Schichereichen des selbstorganisierten bestimmten Materials umfasst.

公开(公告)号：GB2487130A

公开(公告)日：2012-07-11

申请号：GB201200148

申请日：2010-08-31

Applicant: IBM

Inventor： ITO HIROSHI ,  TRUONG HOA ,  CHENG JOY ,  KIM HO-CHEOL

IPC: C08G63/00 ,  C08L35/00 ,  G03C1/73

Abstract: Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.

公开(公告)号：DE69322946T2

公开(公告)日：1999-08-12

申请号：DE69322946

申请日：1993-10-15

Applicant: IBM

Inventor： BREYTA GREGORY ,  KNORS CHRISTOPHER JOHN ,  ITO HIROSHI ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/004 ,  G03F7/039 ,  C08F8/12

Abstract: The present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with acrylate, methacrylate or a mixture of acrylate and methacrylate.

公开(公告)号：DE69118442T2

公开(公告)日：1996-10-10

申请号：DE69118442

申请日：1991-05-15

Applicant: IBM

Inventor： GOLDBERG MARTIN J ,  ITO HIROSHI ,  KOVAC CAROLINE A ,  PALMER MICHAEL J ,  POLLAK ROGER A ,  POORE PAIGE A

IPC: B23K1/00 ,  B23K35/22 ,  B23K35/34 ,  B23K101/40 ,  H05K3/10 ,  H05K3/34

Abstract: A chemical solder is described that includes an organometallic which thermally degrades within a predetermined temperature range to a metal and volatile compounds. The solder also includes a polymeric matrix that decomposes within the same temperature range to volatile fractions, thereby leaving only the metal. A method for bonding first and second bodies is disclosed wherein a chemical solder, as above-described, is disposed between the first and second bodies and heat is applied to elevate the solder to the predetermined temperature range to thermally degrade the organometallic compound and to decompose the polymeric matrix. The remaining metal bonds the first and second bodies.

公开(公告)号：DE3382809D1

公开(公告)日：1996-10-10

申请号：DE3382809

申请日：1983-05-02

Applicant: IBM

Inventor： ITO HIROSHI ,  WILLSON CARLTON GRANT ,  FRECHET JEAN M J

IPC: C08K5/00 ,  C08F8/00 ,  C08L33/00 ,  C08L33/02 ,  G03F7/004 ,  G03F7/021 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027

公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

公开(公告)号：CA1282273C

公开(公告)日：1991-04-02

申请号：CA494157

申请日：1985-10-29

Applicant: IBM

Inventor： HEFFERON GEORGE J ,  ITO HIROSHI ,  MACDONALD SCOTT A ,  WILLSON CARLTON G

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  G03F7/26

Abstract: METHOD OF CREATING PATTERNED MULTILAYER FILMS FOR USE IN PRODUCTION OF SEMICONDUCTOR CIRCUITS AND SYSTEMS A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.