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    THERMALLY STABLE PHOTORESISTS WITH HIGH SENSITIVITY
    6.
    发明专利
    THERMALLY STABLE PHOTORESISTS WITH HIGH SENSITIVITY 未知

    公开(公告)号：CA1308594C

    公开(公告)日：1992-10-13

    申请号：CA542534

    申请日：1987-07-20

    Applicant: IBM

    Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

    IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

    PROCESS FOR MAKING SELF-ALIGNING THIN FILM TRANSISTORS
    8.
    发明专利
    PROCESS FOR MAKING SELF-ALIGNING THIN FILM TRANSISTORS 未知

    公开(公告)号：CA1278883C

    公开(公告)日：1991-01-08

    申请号：CA579011

    申请日：1988-09-30

    Applicant: IBM

    Inventor： HINSBERG WILLIAM D ,  HOWARD WEBSTER E ,  WILLSON CARLTON G

    IPC: H01L21/027 ,  H01L21/30 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

    Abstract: of the Invention PROCESS FOR MAKING SELF-ALIGNING THIN FILM TRANSISTORS A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.

    HIGH RESOLUTION OPTICAL LITHOGRAPHY METHOD AND APPARATUS HAVING EXCIMER LASER LIGHT SOURCE AND STIMULATED RAMAN SHIFTING
    10.
    发明专利
    HIGH RESOLUTION OPTICAL LITHOGRAPHY METHOD AND APPARATUS HAVING EXCIMER LASER LIGHT SOURCE AND STIMULATED RAMAN SHIFTING 未知

    公开(公告)号：CA1173889A

    公开(公告)日：1984-09-04

    申请号：CA399143

    申请日：1982-03-23

    Applicant: IBM

    Inventor： JAIN KANTILAL ,  WILLSON CARLTON G

    IPC: H01L21/027 ,  G03F7/20 ,  H01L21/30 ,  H01S3/30 ,  G03G13/00 ,  G03G15/00

    Abstract: HIGH RESOLUTION OPTICAL LITHOGRAPHY METHOD AND APPARATUS HAVING EXCIMER LASER LIGHT SOURCE AND STIMULATED RAMAN SHIFTING An optical lithography method and apparatus in which a pulsed excimer laser produces at least one fundamental output which is directed to expose a photosensitive medium. The output is highly non-gaussian and has sufficient power so that full exposures can be accomplished within a few seconds. An alternate light source is provided by directing the excimer laser output to a Raman cell having a suitable Raman medium contained therein. At least one secondary wavelength is produced by stimulated Raman scattering and the output of the Raman cell is directed to expose a photosensitive medium. A mixture of more than one excimer gas can also be provided in the excimer laser to produce one fundamental output for each excimer gas present in the mixture. These outputs can be directed to expose a photosensitive medium directly. Alternatively, these outputs can be directed to a Raman cell having either a single Raman medium or multiple Raman media in a suitable mixture and directing the output from the Raman cell to expose the photosensitive medium. SA9-81-008

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