公开(公告)号：DE69214035T2

公开(公告)日：1997-04-10

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：SG43691A1

公开(公告)日：1997-11-14

申请号：SG1995002204

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONDS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：DE69214035D1

公开(公告)日：1996-10-31

申请号：DE69214035

申请日：1992-05-21

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  HEFFERON GEORGE J ,  LYONS CHRISTOPHER F ,  MOREAU WAYNE M ,  WOOD ROBERT L

IPC: G03F7/11 ,  C08L27/12 ,  G03F7/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

公开(公告)号：CA1282273C

公开(公告)日：1991-04-02

申请号：CA494157

申请日：1985-10-29

Applicant: IBM

Inventor： HEFFERON GEORGE J ,  ITO HIROSHI ,  MACDONALD SCOTT A ,  WILLSON CARLTON G

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065 ,  G03F7/26

Abstract: METHOD OF CREATING PATTERNED MULTILAYER FILMS FOR USE IN PRODUCTION OF SEMICONDUCTOR CIRCUITS AND SYSTEMS A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained. The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.