公开(公告)号：CA1250177A

公开(公告)日：1989-02-21

申请号：CA496973

申请日：1985-12-05

Applicant: IBM

Inventor： HULT ANDERS ,  ITO HIROSHI ,  MACDONALD SCOTT A ,  WILLSON C GRANT

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PROCESS FOR PREPARING NEGATIVE RELIEF IMAGES Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.

公开(公告)号：CA1221864A

公开(公告)日：1987-05-19

申请号：CA499173

申请日：1986-01-08

Applicant: IBM

Inventor： CLECAK NICHOLAS J ,  GRANT BARBARA D ,  MILLER ROBERT D ,  TOMPKINS TERRY C ,  WILLSON C GRANT

IPC: C08L101/00 ,  C08K5/00 ,  C08K5/53 ,  C08L33/00 ,  C08L33/02 ,  C08L61/10 ,  G03C1/72 ,  G03C5/16 ,  G03F7/016 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027 ,  G03C1/54

Abstract: HIGH-CONTRAST, HIGH RESOLUTION DEEP ULTRAVIOLET LITHOGRAPHIC RESISTS A lithographic resin for use with deep ultraviolet radiation comprises a weakly acidic resin and an alpha phosphoryl substituted diazo carbonyl compound as a sensitizer.

公开(公告)号：CA1122467A

公开(公告)日：1982-04-27

申请号：CA361713

申请日：1980-10-07

Applicant: IBM

Inventor： CLECAK NICHOLAS J ,  GRANT BARBARA D ,  WILLSON C GRANT

IPC: G03C1/72 ,  C08K5/1575 ,  C08L61/00 ,  C08L61/04 ,  C08L61/06 ,  G03C1/00 ,  G03F7/004 ,  G03F7/016 ,  G03F7/022 ,  G03F7/038 ,  G03F7/26 ,  H01L21/26 ,  G03C1/52 ,  B41M

Abstract: Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: wherein R1 is C1 to C20 alkyl or aryl, R2 is H, C1 to C20 alkyl or aryl, or together R1 and R2 are cycloalkyl, A is N or H.