公开(公告)号：JP2002368147A

公开(公告)日：2002-12-20

申请号：JP2002101203

申请日：2002-04-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： COOLBAUGH DOUGLAS D ,  LANZEROTTI LOUIS D ,  MALINOWSKI JOHN C

IPC: H01L29/73 ,  G03F9/00 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/544 ,  H01L27/06

CPC classification number: G03F9/708 ,  G03F9/7084 ,  H01L21/8249 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a BiCMOS device comprising a deep sub-collector region and a self-aligning mark. SOLUTION: There are provided a step (a) where a layer with a first pattern comprising a thick dielectric material is formed on the surface of a material stack formed on a semiconductor substrate through lithography, a step (b) where high energy/high dose injection is performed via an opening of the first layer as well as the material stack to form at least one deep sub-collector region in the semiconductor substrate, a step (c) where a layer with a second pattern (photoresist or dielectrics) is formed by lithography, and a step (d) where etching is performed through the material stack for forming an alignment mark in the semiconductor substrate, which is positioned below, using the layer with the first pattern as an alignment mark mask.

Abstract translation: 要解决的问题：提供一种用于形成包括深子集电极区域和自对准标记的BiCMOS器件的方法。 解决方案：提供了一种步骤（a），其中通过光刻在形成在半导体衬底上的材料堆叠的表面上形成具有包括厚电介质材料的第一图案的层，步骤（b），其中高能量​​/高剂量 通过第一层的开口以及材料堆叠进行注入以在半导体衬底中形成至少一个深的亚极集电极区域;步骤（c），其中形成具有第二图案的层（光致抗蚀剂或电介质） 以及步骤（d），其中使用具有第一图案的层作为对准标记掩模，通过材料堆叠进行蚀刻以在位于下方的半导体衬底中形成对准标记。

公开(公告)号：JPH11260798A

公开(公告)日：1999-09-24

申请号：JP1536899

申请日：1999-01-25

Applicant: IBM

Inventor： ARMACOST MICHAEL D ,  DOBUZINSKY DAVID M ,  MALINOWSKI JOHN C ,  NG HUNG Y ,  WISE RICHARD S ,  YU CHIENFAN

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To provide a method for anisotropic etching of a nitride layer on a substrate. SOLUTION: In this etching process, an etchant gas containing fluorohydrocarbon rich in hydrogen, oxidant and carbon source is used. It is preferable that the fluorohydrocarbon rich is hydrogen be CH3 or CH2 F2 , the carbon source be CO2 or CO, and the oxidant be O2 . It is preferable that the fluorohydrocarbon exsist in a gas of about 7-35 vol.%, the oxidant exsist in a gas of about 1-35 vol.%, and the carbon source exsists in a gas of about 30-92 vol.%.