公开(公告)号：JP2001284454A

公开(公告)日：2001-10-12

申请号：JP2001047144

申请日：2001-02-22

Applicant: IBM

Inventor： DAVIS CHARLES R ,  EDELSTEIN DANIEL CHARLES ,  HAY JOHN C ,  HEDRICK JEFFREY C ,  JAHNES CHRISTOPHER ,  MC GAHAY VINCENT ,  NYE HENRY A

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To improve a rigidity of a backend-of-line structure. SOLUTION: The damascene structure of interconnecting multi-level coppers on an integrated circuit chip includes several line conductors which are on the integrated circuit and are separated by dielectric materials having quite low dielectric constant and high elastic modulus. A second flat interconnection layer 18 on the first flat interconnection layer 14, consists of a dielectric film 26 having a higher elastic modulus than that of a dielectric material in the first flat interconnection layer 14, and an electrical conduction via 28 passing through the dielectric film 26. Electrical conduction vias 28 contact line conductors 22 selectively. A third flat interconnection layer 20 on the second flat interconnection layer 18, has several line conductors 22 which are isolated by dielectric materials and contact electrical conduction vias selectively.

公开(公告)号：DE10106161A1

公开(公告)日：2001-09-13

申请号：DE10106161

申请日：2001-02-10

Applicant: IBM

Inventor： DAVIS CHARLES R ,  EDELSTEIN DANIEL CHARLES ,  HAY JOHN C ,  HEDRICK JEFFREY C ,  JAHNES CHRISTOPHER ,  MC GAHAY VINCENT ,  NYE HENRY

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: Planar layer for conductors, includes numerous connecting lines separated from each other by dielectric. This has relatively low: dielectric constant and modulus of elasticity. A planar, perforated dielectric film layer included, has a higher modulus of elasticity. One of the conductor- and the perforated layers, is located on an integrated circuit substrate, defining a first layer. The other conductor- and perforated layer is located on the first, such that perforations make selective contact with conductors of the conductor layer.