公开(公告)号：JP2001284454A

公开(公告)日：2001-10-12

申请号：JP2001047144

申请日：2001-02-22

Applicant: IBM

Inventor： DAVIS CHARLES R ,  EDELSTEIN DANIEL CHARLES ,  HAY JOHN C ,  HEDRICK JEFFREY C ,  JAHNES CHRISTOPHER ,  MC GAHAY VINCENT ,  NYE HENRY A

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To improve a rigidity of a backend-of-line structure. SOLUTION: The damascene structure of interconnecting multi-level coppers on an integrated circuit chip includes several line conductors which are on the integrated circuit and are separated by dielectric materials having quite low dielectric constant and high elastic modulus. A second flat interconnection layer 18 on the first flat interconnection layer 14, consists of a dielectric film 26 having a higher elastic modulus than that of a dielectric material in the first flat interconnection layer 14, and an electrical conduction via 28 passing through the dielectric film 26. Electrical conduction vias 28 contact line conductors 22 selectively. A third flat interconnection layer 20 on the second flat interconnection layer 18, has several line conductors 22 which are isolated by dielectric materials and contact electrical conduction vias selectively.

公开(公告)号：WO02069381A2

公开(公告)日：2002-09-06

申请号：PCT/US0204879

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76829

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90°C or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

Abstract translation: 通过（a）将含有至少一个可聚合基团的硅烷偶联剂施加到基材的表面来提供具有改善的粘合性的基本上无缺陷的低k电介质膜，以便提供所述硅烷偶联剂的基本上均匀的涂层 剂; （b）在约90℃以上的温度下加热含有硅烷偶联剂涂层的基材，以提供含有Si-O键的表面; （c）用有效去除任何残留的硅烷偶联剂的合适溶剂漂洗加热的基底; 和（d）将介电材料施加到含有Si-O键的漂洗表面上。

公开(公告)号：AT333144T

公开(公告)日：2006-08-15

申请号：AT02721047

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：DE10106161A1

公开(公告)日：2001-09-13

申请号：DE10106161

申请日：2001-02-10

Applicant: IBM

Inventor： DAVIS CHARLES R ,  EDELSTEIN DANIEL CHARLES ,  HAY JOHN C ,  HEDRICK JEFFREY C ,  JAHNES CHRISTOPHER ,  MC GAHAY VINCENT ,  NYE HENRY

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: Planar layer for conductors, includes numerous connecting lines separated from each other by dielectric. This has relatively low: dielectric constant and modulus of elasticity. A planar, perforated dielectric film layer included, has a higher modulus of elasticity. One of the conductor- and the perforated layers, is located on an integrated circuit substrate, defining a first layer. The other conductor- and perforated layer is located on the first, such that perforations make selective contact with conductors of the conductor layer.

公开(公告)号：IN1322DE2003A

公开(公告)日：2005-05-27

申请号：IN1322DE2003

申请日：2003-08-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：ES2262797T3

公开(公告)日：2006-12-01

申请号：ES02721047

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: Un método de fabricación de un circuito integrado que comprende las etapas de: (a) aplicar un agente de copulación de silano que con- tiene al menos un grupo polimerizable a una superficie de un substrato (10) de tal manera como para proporcionar un revestimiento sustancialmente uniforme (12) de dicho agente de copulación de silano sobre dicho substrato; (b) calentar dicho substrato que contiene dicho reves- timiento de dicho agente de copulación de silano a una tem- peratura de 90ºC o superior para proporcionar una capa superficial modificada (14) a dicho substrato que contiene enlaces Si-O; (c) enjuagar dicho substrato calentado con un disol- vente adecuado que es eficaz para separar cualquier agente de copulación de silano sin reaccionar; y (d) aplicar un material dieléctrico (16) a dicha su- perficie enjuagada que contiene dichos enlaces Si-O.