公开(公告)号：JPH08213461A

公开(公告)日：1996-08-20

申请号：JP30098895

申请日：1995-11-20

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To obtain insulator having low permitivity and gap filling capability, by annealing a curing flowable oxide layer in an atmosphere of hydrogen and aluminum, diffusing hydrogen in the flowable oxide layer, and specifying the permittivity. SOLUTION: This insulator is used for covering interconnection wiring level 3 in the semiconductor substrate surface containing a semiconductor device, provided with a first flowable oxide layer 1 for covering the interconnection wiring level 3, and cures the oxide layer 1. The flowable oxide layer 1 is annealed in an atmosphere of hydrogen and aluminum. Hydrogen is diffused in the flowable oxide layer 1, and its permitivity is reduced to be less than 3.2. As the flowable oxide layer 1, cured hydrogensilsesquioxane is contained. Thereby special insulator having comparatively low permitivity less than 3.2 and excellent gap filling capability can be obtained.

公开(公告)号：IE20010123A1

公开(公告)日：2001-09-19

申请号：IE20010123

申请日：2001-02-09

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  PURUSHOTHAMAN SAMPATH ,  GIGNAC LYNNE M ,  GATES STEPHEN MCCONNELL ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR ,  RESTAINO DARRYL D ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/223

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：GB2365216B

公开(公告)日：2004-10-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：GB2365216A

公开(公告)日：2002-02-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device contains a diffusion barrier layer 14a, 14b, 14c. The semiconductor device preferably includes a semiconductor substrate 8 and a dielectric layer 10 containing conductive metal elements 12; and the diffusion barrier layer 14 is applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is typically more concentrated near the lower and upper surfaces 14a, 14b of the diffusion barrier layer as compared to the central portion 14c of the diffusion barrier layer. It is found that this process leads to improved adhesion of the diffusion barrier layer, but without raising the dielectric constant too much. The diffusion barrier layer may also include oxygen. The diffusion barrier layer may be formed by atomic layer deposition or by PECVD.