公开(公告)号：DE3880823T2

公开(公告)日：1993-10-28

申请号：DE3880823

申请日：1988-12-15

Applicant: IBM

Inventor： MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  WALSH JOSEPH GREGORY ,  WILLSON CARLTON GRANT

IPC: C07C309/76 ,  C07C67/00 ,  C07C301/00 ,  G03C1/72 ,  G03C1/73 ,  G03F7/022

Abstract: Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

公开(公告)号：DE3272766D1

公开(公告)日：1986-09-25

申请号：DE3272766

申请日：1982-11-23

Applicant: IBM

Inventor： CLECAK NICHOLAS JEFFRIES ,  MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  TOMPKINS TERRY CADY ,  TWIEG ROBERT JAMES ,  WILLSON CARLTON GRANT

IPC: G03C1/72 ,  C08L61/00 ,  C08L61/04 ,  G03F7/022 ,  H01L21/027 ,  G03F7/08

Abstract: Positive resists are formed from a soluble phenolic resin and a sensitizer which is a diester of a 1-oxo-2-diazonaphthalene sulfonic acid and of an unsymmetrical primary or secondary aliphatic diol which is a mixture of geometric and diastereoisomers.

公开(公告)号：DE3880823D1

公开(公告)日：1993-06-09

申请号：DE3880823

申请日：1988-12-15

Applicant: IBM

Inventor： MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  WALSH JOSEPH GREGORY ,  WILLSON CARLTON GRANT

IPC: C07C309/76 ,  C07C67/00 ,  C07C301/00 ,  G03C1/72 ,  G03C1/73 ,  G03F7/022

Abstract: Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

公开(公告)号：DE3467430D1

公开(公告)日：1987-12-17

申请号：DE3467430

申请日：1984-05-16

Applicant: IBM

Inventor： CLECAK NICHOLAS JEFFRIES ,  MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  TOMPKINS TERRY CADY ,  WILLSON CARLTON GRANT

IPC: G03F7/20 ,  C07D213/77 ,  G03C1/72 ,  G03C5/08 ,  G03F7/008 ,  G03F7/016 ,  G03F7/022 ,  G03F7/039 ,  H01L21/027 ,  G03F7/08

Abstract: A lithographic resist for use with deep ultra-violet radiation comprising an acidic resin and a diazohomotetramic acid sensitizer.