公开(公告)号：DE69836114D1

公开(公告)日：2006-11-23

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

公开(公告)号：DE69836114T2

公开(公告)日：2007-04-19

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.