公开(公告)号：JPH1145887A

公开(公告)日：1999-02-16

申请号：JP14391498

申请日：1998-05-26

Applicant: IBM

Inventor： RATHORE HAZARA S ,  DALAL HORMAZDYAR M ,  PAUL S MCLAUGHLIN ,  NGUYEN DU B ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To form performance interconnection circuit having a high dimension of sub-half micron having enhanced processing yield and reliability by a method wherein a multilayered interconnection of a copper wire separated from each other by a dielectric insulation is formed, and a contact part with an electrical mechanism in a substrate is formed. SOLUTION: A thin layer 7 of an element, capable of forming a compound between copper and a metal which preferably has a thickness of about 100 to 600 angstroms is adhered to an arbitrarily selected layer 6, and thereafter a thin copper seed layer 8 of a thickness of about 600 to 2000 angstroms is typically stacked. A remaining copper layer 9 is electrically plated after the copper seed layer 8 to bury a groove, or the layer 8, or the layer 8 and the layer 9, may be stacked by a CVD method. Next, this substrate wafer is polished by a chemical mechanical method and all extra metals are removed from a region in which a pattern is not drawn to thereby make a flat structure.

公开(公告)号：DE69836114T2

公开(公告)日：2007-04-19

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

公开(公告)号：DE69836114D1

公开(公告)日：2006-11-23

申请号：DE69836114

申请日：1998-05-08

Applicant: IBM

Inventor： ASHLEY LEON ,  DALAL HORMAZDYAR M ,  NGUYEN DU BINH ,  RATHORE HAZARA S ,  SMITH RICHARD G ,  SWINTON ALEXANDER J ,  WACHNIK RICHARD A

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.