公开(公告)号：WO2013090529A1

公开(公告)日：2013-06-20

申请号：PCT/US2012069431

申请日：2012-12-13

Applicant: IBM

Inventor： GOLDFARB DARIO ,  GLODDE MARTIN ,  HUANG WU-SONG ,  KINSHO TAKESHI ,  LI WAI-KIN ,  NODA KAZUMI ,  OHASHI MASASKI ,  TACHIBANA SEIICHIRO

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

CPC classification number: G03F7/094 ,  G02B5/208 ,  G02B5/223 ,  G03F7/091 ,  G03F7/105 ,  G03F9/7026

Abstract: The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near- infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography.

Abstract translation: 本发明涉及用于集成半导体晶片的图案化的垂直取向和校正的近红外（NIR）膜组合物和使用该组合物的图案形成方法。 NIR吸收膜组合物包括具有聚甲炔阳离子和可交联阴离子的NIR吸收染料，可交联聚合物和交联剂。 图案形成方法包括通过感测从包含光致抗蚀剂层的基板反射的近红外发射和由光致抗蚀剂层下的NIR吸收膜组合物形成的NIR吸收层来对准和聚焦光致抗蚀剂层的焦平面位置。 近红外吸收膜组合物和图案形成方法对于在具有复杂掩埋形貌的半导体衬底上形成材料图案特别有用。