公开(公告)号：JPH1074910A

公开(公告)日：1998-03-17

申请号：JP19424797

申请日：1997-07-18

Applicant: IBM ,  SIEMENS AG

Inventor： ALSMEIER JOHANN ,  MANDELMAN JACK ALLAN ,  O'NEILL JAMES ANTHONY ,  PARKS CHRISTOPHER ,  PARRIES PAUL CHRISTIAN

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To obtain an integrated circuit capacitor of high capacitance by using an inversion layer inside a lightly doped substrate as a plate paired electrode for a capacitor. SOLUTION: A depletion region 302 is formed around a memory node 224 peripheral besides neighboring to an N-separation band 204 by forming an inversion node capacitor 200 on a P-substrate 202. An inversion region 304 is formed inside the depletion region 302 near the memory node 224. The inversion region is connected to the N-separation band 204. Accordingly, an electric field between the memory node 224 and the paired electrode of the inversion region 304 is partially defined by a work function difference between the N- separation band 204 and an N material inside the memory node 224. The N separation band 204 functions as a wiring connection to a common pared electrode of the inversion region 304 of the capacitor 200. Thereby, conductivity of the N separation band 204 plays a more important role than the designing of prior arts.

公开(公告)号：SG42979A1

公开(公告)日：1997-10-17

申请号：SG1996001715

申请日：1992-03-31

Applicant: IBM

Inventor： LEE PEI-ING PAUL ,  LICATA THOMAS JOHN ,  MCDEVITT THOMAS LEDDY ,  PARRIES PAUL CHRISTIAN ,  PENNINGTON SCOTT LEWIS ,  RYAN JAMES GARDINER ,  STRIPPE DAVID CRAIG

IPC: C23C14/04 ,  H01L21/203 ,  C23C14/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.