公开(公告)号：EP2089169A4

公开(公告)日：2010-12-29

申请号：EP07853978

申请日：2007-10-12

Applicant: IBM

Inventor： CRANDAL COONEY EDWARD ,  MURPHY WILLIAM JOSEPH ,  STAMPER ANTHONY KENDALL ,  STRIPPE DAVID CRAIG

IPC: B08B5/00 ,  C25F1/00

CPC classification number: H01L21/67028 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02063

公开(公告)号：DE3875442D1

公开(公告)日：1992-11-26

申请号：DE3875442

申请日：1988-08-20

Applicant: IBM

Inventor： PHINNEY RICHARD ROSS ,  STRIPPE DAVID CRAIG

IPC: C23C14/24 ,  C23C14/26 ,  H01L21/203 ,  H05B6/24 ,  C23C14/28 ,  C23C14/56

Abstract: An evaporation apparatus containing an evaporation source, comprising a crucible (58) having a given depth and a given diameter, said crucible (58) supporting molten material (19) to be evaporated; a susceptor (57) abutting said crucible (58), said susceptor (57) having a volume commensurate with that of said molten material with said crucible prior to evaporation of said molten material; and a conductive coil (22) disposed about said susceptor (57) and said crucible (58) for coupling RF energy to said susceptor (57) and to said crucible (58). The method of evaporating material on a workpiece uses such an apparatus and comprises the steps: filling the crucible (58) with an initial volume of the material (19) to be deposited with said volume being commensurate with the volume of the susceptor (57), quickly heating the charge to a temperature at which it self-fractionates and after the material is stabilized at the desired evaporation temperature said material is deposited onto said workpiece.

公开(公告)号：IE80715B1

公开(公告)日：1998-12-30

申请号：IE921253

申请日：1992-04-16

Applicant: SIEMENS AG ,  IBM

Inventor： RYAN JAMES GARDNER ,  STRIPPE DAVID CRAIG ,  VOLLMER MICHAEL BERND

IPC: C23C14/04 ,  H01J37/32 ,  H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  H05K3/40 ,  H01L21/90

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450 C) during the deposition process.

公开(公告)号：DE69217702T2

公开(公告)日：1997-10-23

申请号：DE69217702

申请日：1992-04-16

Applicant: SIEMENS AG ,  IBM

Inventor： RYAN JAMES GARDNER ,  STRIPPE DAVID CRAIG ,  VOLLMER BERND MICHAEL

IPC: H01L21/285 ,  C23C14/04 ,  H01J37/32 ,  H01J37/34 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450 C) during the deposition process.

公开(公告)号：DE3875442T2

公开(公告)日：1993-04-22

申请号：DE3875442

申请日：1988-08-20

Applicant: IBM

Inventor： PHINNEY RICHARD ROSS ,  STRIPPE DAVID CRAIG

IPC: C23C14/24 ,  C23C14/26 ,  H01L21/203 ,  H05B6/24 ,  C23C14/28 ,  C23C14/56

Abstract: An evaporation apparatus containing an evaporation source, comprising a crucible (58) having a given depth and a given diameter, said crucible (58) supporting molten material (19) to be evaporated; a susceptor (57) abutting said crucible (58), said susceptor (57) having a volume commensurate with that of said molten material with said crucible prior to evaporation of said molten material; and a conductive coil (22) disposed about said susceptor (57) and said crucible (58) for coupling RF energy to said susceptor (57) and to said crucible (58). The method of evaporating material on a workpiece uses such an apparatus and comprises the steps: filling the crucible (58) with an initial volume of the material (19) to be deposited with said volume being commensurate with the volume of the susceptor (57), quickly heating the charge to a temperature at which it self-fractionates and after the material is stabilized at the desired evaporation temperature said material is deposited onto said workpiece.

公开(公告)号：IE921253A1

公开(公告)日：1992-10-21

申请号：IE921253

申请日：1992-04-16

Applicant: SIEMENS AG ,  IBM

Inventor： RYAN JAMES GARDNER ,  STRIPPE DAVID CRAIG ,  VOLLMER MICHAEL BERND

IPC: C23C14/04 ,  H01J37/32 ,  H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  H05K3/40 ,  H01L21/90

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450 C) during the deposition process.

公开(公告)号：SG42979A1

公开(公告)日：1997-10-17

申请号：SG1996001715

申请日：1992-03-31

Applicant: IBM

Inventor： LEE PEI-ING PAUL ,  LICATA THOMAS JOHN ,  MCDEVITT THOMAS LEDDY ,  PARRIES PAUL CHRISTIAN ,  PENNINGTON SCOTT LEWIS ,  RYAN JAMES GARDINER ,  STRIPPE DAVID CRAIG

IPC: C23C14/04 ,  H01L21/203 ,  C23C14/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：DE69217702D1

公开(公告)日：1997-04-10

申请号：DE69217702

申请日：1992-04-16

Applicant: SIEMENS AG ,  IBM

Inventor： RYAN JAMES GARDNER ,  STRIPPE DAVID CRAIG ,  VOLLMER BERND MICHAEL

IPC: H01L21/285 ,  C23C14/04 ,  H01J37/32 ,  H01J37/34 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450 C) during the deposition process.