公开(公告)号：SG42979A1

公开(公告)日：1997-10-17

申请号：SG1996001715

申请日：1992-03-31

Applicant: IBM

Inventor： LEE PEI-ING PAUL ,  LICATA THOMAS JOHN ,  MCDEVITT THOMAS LEDDY ,  PARRIES PAUL CHRISTIAN ,  PENNINGTON SCOTT LEWIS ,  RYAN JAMES GARDINER ,  STRIPPE DAVID CRAIG

IPC: C23C14/04 ,  H01L21/203 ,  C23C14/46 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.