公开(公告)号：JP2001015474A

公开(公告)日：2001-01-19

申请号：JP2000153650

申请日：2000-05-24

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： KUDELKA STEPHAN ,  RATH DAVID

IPC: B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To avoid the inefficient excessive saturation of heated demineralized water with gas by adjusting the gas concentration in the demineralized water before the water is heated to a selective cleaning temperature for cleaning a semiconductor wafer under ultrasonic vibrating actions. SOLUTION: The gas space in a degassing chamber 11 is maintained at a selective negative pressure by operating a vacuum pump 16 in connection with a pressure sensor 18. Then the pressure in the chamber 11 is adjusted by releasing a selective amount of nitrogen gas from the water in the water space of the chamber 11 to the gas space of the chamber 11 through a chamber thin film, and removing the gas by sucking and exhaling the gas through a gas discharge pipe 17. In addition, the demineralized water in a heating vessel 12 is selectively warmed by means of a controller 21 and supplied to a cleaning tank 13 for ultrasonically cleaning a semiconductor wafer.

公开(公告)号：WO0217389A3

公开(公告)日：2002-05-02

申请号：PCT/US0124193

申请日：2001-08-01

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： KUDELKA STEPHAN ,  RATH DAVID

IPC: H01L21/336 ,  H01L21/8234

CPC classification number: H01L29/6653 ,  H01L21/823468 ,  H01L29/6659

Abstract: The present provides a method for tailoring silicon dioxide source and drain implants and, if desired, extension implants of different devices used on a semiconductor wafer in order to realize shallow junctions and minimize the region of overlap between the gate and source and drain regions and any extension implants. The method includes the steps of applying a mask over a first gate structure positioned on a semiconductor substrate, depositing a layer of a spacer material over the surface of the first gate structure and a second gate structure adjacent to the first gate structure, etching the spacer material so that a portion of the spacer material remains on the second gate sidewalls and a sidewall of the block out mask, implanting ions into the semiconductor substrate into a region defined between the spacer material on the block out mask and the second gate to form a source or drain region, and removing the spacer material and block out mask. If desired, a second etch can be performed on the spacer material to reduce spacer thickness, and second ions can be implanted into the semiconductor substrate into an implant region defined between the spacer material remaining after the second etch.

Abstract translation: 本发明提供了一种用于调整二氧化硅源极和漏极注入以及如果需要的话用于在半导体晶片上使用的不同器件的扩展注入以实现浅结并使栅极与源极和漏极区域之间的重叠区域最小化以及任何 扩展植入物。 该方法包括以下步骤：在位于半导体衬底上的第一栅极结构上施加掩模;在第一栅极结构的表面上沉积隔离材料层;以及与第一栅极结构相邻的第二栅极结构;蚀刻隔离物 材料，使得间隔件材料的一部分保留在第二栅极侧壁和阻挡外掩模的侧壁上，将离子注入到半导体衬底中，进入阻挡阻挡掩模上的间隔件材料和第二栅极之间限定的区域中，以形成 源极或漏极区域，并去除间隔材料并遮挡掩模。 如果需要，可以在间隔物材料上执行第二次蚀刻以减小间隔物厚度，并且可以将第二离子注入到半导体衬底中，进入在第二次蚀刻之后剩余的间隔物材料之间限定的注入区域中。

公开(公告)号：AU2020381881A1

公开(公告)日：2022-05-12

申请号：AU2020381881

申请日：2020-11-13

Applicant: IBM

Inventor： ADIGA VIVEKANANDA ,  SANDBERG MARTIN ,  RATH DAVID

IPC: H01L39/24 ,  G06N10/00 ,  H01L39/22

Abstract: A method of making a Josephson junction in a superconducting qubit includes providing a substrate (100) having a convex structure with a first face (402A) and a second face (402B) meeting at an edge (402C), depositing a first layer of superconducting material (502A) on the first face, oxidizing the first layer to form a layer of oxide material (504A) on a surface of the first layer, and depositing a second layer of the superconducting material (506A) on the second face. A portion of the second layer is in contact with a portion of the layer of oxide material at or in the vicinity of the edge such that the portion of the layer of oxide material is sandwiched between a portion of the first layer and the portion of the second layer to define the Josephson junction at or in the vicinity of the edge.

公开(公告)号：AU2020423563A1

公开(公告)日：2022-06-16

申请号：AU2020423563

申请日：2020-12-14

Applicant: IBM

Inventor： ADIGA VIVEKANANDA ,  YAN HONGWEN ,  PAPALIA JOHN ,  RATH DAVID ,  PATEL JYOTICA

IPC: H01L39/24 ,  G06N10/00 ,  H01L27/18 ,  H01L39/14

Abstract: A method for fabricating a bridge structure in a quantum mechanical device includes providing a substructure including a substrate having deposited thereon a layer of a first superconducting material divided into a first portion, a second portion and a third portion that are electrically insulated from each other; depositing a sacrificial layer on the substructure; electrically connecting the first portion and the second portion with a strip of a second superconducting material, the second superconducting material being different from the first superconducting material; and removing a portion of the sacrificial layer so as to form a bridge structure over the third portion between the first portion and the second portion, the bridge structure electrically connecting the first portion to the second portion while not electrically connecting the third portion to the first portion and not electrically connecting the third portion to the second portion.

公开(公告)号：DE60017385D1

公开(公告)日：2005-02-17

申请号：DE60017385

申请日：2000-04-25

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： KUDELKA STEPHAN ,  RATH DAVID

IPC: C11D7/02 ,  B08B3/04 ,  B08B3/12 ,  C11D7/18 ,  C11D17/08 ,  H01L21/304 ,  H01L21/306 ,  H01L21/00

Abstract: A system is provided to prepare deionized water having a 100% saturated concentration of a gas, e.g., nitrogen, at a hot temperature, e.g., 50-85° C., and an attendant pressure, e.g., atmospheric pressure, to clean a semiconductor wafer, e.g., of silicon. The gas concentration of a first deionized water portion having a predetermined concentration of the gas at a cold temperature, e.g., 20-30° C., is adjusted in a gassifier chamber having a pressure pump and a pressure sensor, to provide a predetermined under-saturated concentration of the gas at the cold temperature. The temperature of the adjusted gas concentration first water portion is then adjusted by mixing therewith a second deionized water portion having a predetermined concentration of the gas at a predetermined very hot temperature, e.g., 80° C., in a predetermined ratio in a mixer having a temperature sensor. The flows of the first and second water portions are controlled by first and second flow controllers, to form a hot bath at the hot temperature having such saturated gas concentration to clean the wafer, e.g., in a cleaning tank under megasonic vibrations. A controller is connected to the pump, pressure sensor, temperature sensor and first and second flow controllers to control the chamber pressure and the operation of the flow controllers.