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公开(公告)号:DE69022975T2
公开(公告)日:1996-05-30
申请号:DE69022975
申请日:1990-11-17
Applicant: IBM
Inventor: BUSCH ROBERT EDWARD , HOVIS WILLIAM PAUL , REDMAN THEODORE MILTON , THOMA ENDRE PHILIP , YANKOSKY JAMES ANDREW
IPC: G11C11/401 , G11C7/10 , G11C7/22 , G11C11/4076 , G11C7/00 , G11C11/409 , G11C11/407
Abstract: A method and device for setting at lease three operating modes of a memory device is provided. The voltage signal is sensed at a first input and an enable signal is sensed at a second input. When an enable signal is received at a second input the memory device operates at the first operating mode if the voltage state at the first input is low; it operates at a second mode if the voltage state at the second is high; and it operates at a third operating mode if the voltage at the first input changes after the enable signal is received at the input. Also a four mode operation can be achieved.
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公开(公告)号:DE69023467D1
公开(公告)日:1995-12-14
申请号:DE69023467
申请日:1990-09-03
Applicant: IBM
Inventor: BUTLER EDWARD , ELLIS WAYNE FREDERICK , REDMAN THEODORE MILTON , THOMA ENDRE PHILIP
IPC: G11C29/00 , G11C8/08 , G11C11/401 , G11C11/407 , G11C29/50 , G11C8/00
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公开(公告)号:DE2659660A1
公开(公告)日:1977-09-29
申请号:DE2659660
申请日:1976-12-30
Applicant: IBM
Inventor: LEWIS SCOTT CLARENCE , REDMAN THEODORE MILTON , ROCK JAMES EDWARD , WILDER DONALD LAWRENCE
IPC: G11C11/417 , G11C7/00 , G11C11/34 , G11C11/4093 , G11C11/418 , H03K3/356 , H03K5/02
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公开(公告)号:DE69023467T2
公开(公告)日:1996-06-20
申请号:DE69023467
申请日:1990-09-03
Applicant: IBM
Inventor: BUTLER EDWARD , ELLIS WAYNE FREDERICK , REDMAN THEODORE MILTON , THOMA ENDRE PHILIP
IPC: G11C29/00 , G11C8/08 , G11C11/401 , G11C11/407 , G11C29/50 , G11C8/00
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公开(公告)号:DE69022975D1
公开(公告)日:1995-11-16
申请号:DE69022975
申请日:1990-11-17
Applicant: IBM
Inventor: BUSCH ROBERT EDWARD , HOVIS WILLIAM PAUL , REDMAN THEODORE MILTON , THOMA ENDRE PHILIP , YANKOSKY JAMES ANDREW
IPC: G11C11/401 , G11C7/10 , G11C7/22 , G11C11/4076 , G11C7/00 , G11C11/409 , G11C11/407
Abstract: A method and device for setting at lease three operating modes of a memory device is provided. The voltage signal is sensed at a first input and an enable signal is sensed at a second input. When an enable signal is received at a second input the memory device operates at the first operating mode if the voltage state at the first input is low; it operates at a second mode if the voltage state at the second is high; and it operates at a third operating mode if the voltage at the first input changes after the enable signal is received at the input. Also a four mode operation can be achieved.
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