公开(公告)号：GB2627627B

公开(公告)日：2025-04-02

申请号：GB202407430

申请日：2022-11-23

Applicant: IBM

Inventor： RUILONG XIE ,  JULIEN FROUGIER ,  JUNLI WANG ,  DECHAO GUO ,  RUQIANG BAO ,  RISHIKESH KRISHNAN ,  BALASUBRAMANIAN PRANATHARTHIHARAN

IPC: H10D84/01 ,  H01L23/528 ,  H10D30/01 ,  H10D30/43 ,  H10D30/67 ,  H10D62/10 ,  H10D64/01 ,  H10D84/03 ,  H10D84/85 ,  H10D88/00

Abstract: A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a second work function metal. In the structure, the first work function metal is absent from an area including the second work function metal, and vice versa. Thus, no shared work functional metal is present in the semiconductor structure.