公开(公告)号：DE2753489A1

公开(公告)日：1978-06-29

申请号：DE2753489

申请日：1977-12-01

Applicant: IBM

Inventor： SARKARY HOMI GUSTADJI

IPC: H05K3/46 ,  H01L21/768 ,  H01L23/522 ,  H01L27/04

公开(公告)号：DE3279917D1

公开(公告)日：1989-10-05

申请号：DE3279917

申请日：1982-06-15

Applicant: IBM

Inventor： ANANTHA NARASIPUR GUNDAPPA ,  BHATIA HARSARAN SINGH ,  MAUER IV JOHN LESTER ,  SARKARY HOMI GUSTADJI

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/306

Abstract: The method comprises blanket depositing a layer of a first material on a semiconductor structure, on the surface of which protruding regions (34A) have been formed bordering with a vertical wall (40) on adjacent areas, and subsequently removing completely or selectively that layer by reactive ion etching where prior to the deposition of said layer the vertical wall (40) is reshaped either by removing material from that wall (40) or by accumulating a second material on said wall (40). The method prevents that uncontrolled residues of materials like a doped polysilicon after reactive ion etching steps. These residues might be detrimental to devices and elements, like transistors and resistors formed in the semi-conductor substrate.

公开(公告)号：DE3067439D1

公开(公告)日：1984-05-17

申请号：DE3067439

申请日：1980-07-31

Applicant: IBM

Inventor： GARTNER HELMUT MATTHEW ,  PETVAI STEVE ISTVAN ,  SARKARY HOMI GUSTADJI ,  SCHNITZEL RANDOLPH HUFF

IPC: H01L21/302 ,  C23F4/00 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/31

公开(公告)号：DE3265730D1

公开(公告)日：1985-10-03

申请号：DE3265730

申请日：1982-03-23

Applicant: IBM

Inventor： NAGARAJAN ARUNACHALA ,  SARKARY HOMI GUSTADJI

IPC: H01L27/06 ,  H01L21/033 ,  H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/8222 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L21/263

Abstract: With the method a protective layer (18) that is overlying an insulated oxide layer (16) bordering on a semiconductor substrate is etched selectively by a beam of ions in an inert atmosphere. Using this method pinholes in exposed areas of the oxide layer (16) are not attacked and consequently not extended so that the semiconductor areas underneath these exposed areas are not doped with conductivity determining impurities in a subsequent diffusion step. Therefore the formation of resistive shorts is avoided. … The method is preferably used for fabricating Schottky barrier diodes in conjunction with other devices, such as transistors, so as to form integrated arrays.

公开(公告)号：DE3069592D1

公开(公告)日：1984-12-13

申请号：DE3069592

申请日：1980-07-01

Applicant: IBM

Inventor： GALICKI ARKADI ,  HAYUNGA CARL PETER ,  SARKARY HOMI GUSTADJI

IPC: C23C14/22 ,  C23C14/34 ,  C23C15/00

Abstract: A sputtering system adapted for depositing quartz in uniform thicknesses upon multiple wafers processed in batches including an anode plate having a plurality of wafer locations spaced from the center of the anode, with each wafer location comprising a wafer receiving recess in the anode plate having an angular bottom slope which, in effect, tilts the wafer to an optimum deposition angle with respect to the cathode, depending upon wafer spacing from the center of the anode, to insure uniform deposition across the wafer.

公开(公告)号：IT1165434B

公开(公告)日：1987-04-22

申请号：IT2813179

申请日：1979-12-18

Applicant: IBM

Inventor： DALAL HORMAZDYAR MINOCHER ,  PATNAIK BISWESWAR ,  SARKARY HOMI GUSTADJI

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H05K3/46 ,  H01L

公开(公告)号：DE2966841D1

公开(公告)日：1984-04-26

申请号：DE2966841

申请日：1979-12-10

Applicant: IBM

Inventor： DALAL HORMAZDYAR MINOCHER ,  PATNAIK BISWESWAR ,  SARKARY HOMI GUSTADJI

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H05K3/46 ,  H01L21/90 ,  H01L23/52 ,  H05K3/00