公开(公告)号：DE69231175D1

公开(公告)日：2000-07-20

申请号：DE69231175

申请日：1992-10-23

Applicant: IBM

Inventor： SACHDEV HARBANS SINGH ,  CONLEY WILLARD EARL ,  JAGANNATHAN PREMLATHA ,  KATNANI AHMAD DAUOD ,  WAI-LING KWONG RANEE ,  LINEHAN LEO LAWRENCE ,  MIURA STEVE SEIICHI ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

公开(公告)号：DE69231175T2

公开(公告)日：2000-12-14

申请号：DE69231175

申请日：1992-10-23

Applicant: IBM

Inventor： SACHDEV HARBANS SINGH ,  CONLEY WILLARD EARL ,  JAGANNATHAN PREMLATHA ,  KATNANI AHMAD DAUOD ,  WAI-LING KWONG RANEE ,  LINEHAN LEO LAWRENCE ,  MIURA STEVE SEIICHI ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

公开(公告)号：DE69228358T2

公开(公告)日：1999-09-23

申请号：DE69228358

申请日：1992-10-23

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/022 ,  H01L21/027

Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.

公开(公告)号：DE69228358D1

公开(公告)日：1999-03-18

申请号：DE69228358

申请日：1992-10-23

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SMITH RANDOLPH JOSEPH

IPC: G03F7/022 ,  H01L21/027

Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.