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公开(公告)号:EP0698230A4
公开(公告)日:1995-10-24
申请号:EP94900495
申请日:1993-10-29
Applicant: IBM
Inventor: BRUNSVOLD WILLIAM ROSS , BREYTA GREGORY , DIPIETRO RICHARD ANTHONY , ITO HIROSHI , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH , WELSH KEVIN MICHAEL
IPC: G03F7/004 , G03F7/039 , H01L21/027 , G03C5/16 , G03F7/029
CPC classification number: G03F7/039
Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.
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公开(公告)号:DE69231175D1
公开(公告)日:2000-07-20
申请号:DE69231175
申请日:1992-10-23
Applicant: IBM
Inventor: SACHDEV HARBANS SINGH , CONLEY WILLARD EARL , JAGANNATHAN PREMLATHA , KATNANI AHMAD DAUOD , WAI-LING KWONG RANEE , LINEHAN LEO LAWRENCE , MIURA STEVE SEIICHI , SMITH RANDOLPH JOSEPH
IPC: G03F7/004 , G03F7/038 , G03F7/075 , H01L21/027 , H01L21/30
Abstract: High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.
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公开(公告)号:DE69027799T2
公开(公告)日:1997-01-23
申请号:DE69027799
申请日:1990-02-02
Applicant: IBM
Inventor: BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
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公开(公告)号:DE69231175T2
公开(公告)日:2000-12-14
申请号:DE69231175
申请日:1992-10-23
Applicant: IBM
Inventor: SACHDEV HARBANS SINGH , CONLEY WILLARD EARL , JAGANNATHAN PREMLATHA , KATNANI AHMAD DAUOD , WAI-LING KWONG RANEE , LINEHAN LEO LAWRENCE , MIURA STEVE SEIICHI , SMITH RANDOLPH JOSEPH
IPC: G03F7/004 , G03F7/038 , G03F7/075 , H01L21/027 , H01L21/30
Abstract: High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.
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公开(公告)号:DE69228358T2
公开(公告)日:1999-09-23
申请号:DE69228358
申请日:1992-10-23
Applicant: IBM
Inventor: KNORS CHRISTOPHER JOHN , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SMITH RANDOLPH JOSEPH
IPC: G03F7/022 , H01L21/027
Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.
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公开(公告)号:DE69228358D1
公开(公告)日:1999-03-18
申请号:DE69228358
申请日:1992-10-23
Applicant: IBM
Inventor: KNORS CHRISTOPHER JOHN , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SMITH RANDOLPH JOSEPH
IPC: G03F7/022 , H01L21/027
Abstract: Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.
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公开(公告)号:DE69027799D1
公开(公告)日:1996-08-22
申请号:DE69027799
申请日:1990-02-02
Applicant: IBM
Inventor: BRUNSVOLD WILLIAM ROSS , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH
IPC: G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30
Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
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