公开(公告)号：JP2004167671A

公开(公告)日：2004-06-17

申请号：JP2003348877

申请日：2003-10-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KOCIS JOSEPH T ,  TORNELLO JAMES ,  PETRARCA KEVIN ,  VOLANT RICHARD ,  SUBANNA SESHADRI

IPC: B81C1/00 ,  B81B3/00 ,  H01H50/00

CPC classification number: B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an encapsulated micro electro-mechanical system (MEMS) which causes little metallic fatigue and stress.
SOLUTION: The MEMS manufacturing method includes steps for forming a dielectric layer 204, patterning the upper surface of the first dielectric layer 204 to form a trench, forming a release material 212 in the trench, patterning the upper surface of the release material 212 to form the other trench, forming a first encapsulating layer 222 that includes sidewalls in the other trench, forming a core layer 242 in the first encapsulating layer 222, and forming a second encapsulating layer 262 above the core layer 242 where the second encapsulating layer 262 is connected to sidewalls of the first encapsulating layer 222.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003109431A

公开(公告)日：2003-04-11

申请号：JP2002184636

申请日：2002-06-25

Applicant: IBM

Inventor： JOHN M COTTE ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  PETRARCA KEVIN ,  SIMONS JOHN P ,  TAFT CHARLES J ,  VOLANT RICHARD

IPC: H01B3/30 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a new kind of high polymer material having a lowered dielectric constant, properly applicable to an electric assembly using a small semiconductor element recently developed. SOLUTION: This high polymer material is formed by forcing a polymer having a low dielectric constant into contact with liquid or supercritical carbon dioxide under a thermodynamic condition to maintain the carbon dioxide in a liquid or supercritical state. Thereby, a porous product is formed. Subsequently, the high polymer material having a substantially lowered dielectric constant can be obtained by changing the thermodynamic condition to a working environment wherein the carbon dioxide escapes from fine holes and is replaced with air.

公开(公告)号：JP2002216606A

公开(公告)日：2002-08-02

申请号：JP2001355091

申请日：2001-11-20

Applicant: IBM

Inventor： PETRARCA KEVIN ,  ROBERT A GROVES ,  HERBST BRIAN ,  JAHNES CHRISTOPHER ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a new micromini electromechanical(MEM) switch. SOLUTION: This MEM switch contains a guide post formed on a substrate. A signal transmission line having a gap to form an open-circuit is produced on the substrate. The switch also contains a switch body internally-provided with a via opening, which is movably-located along the length demarcated by the guide post. The guide post is partially enclosed with the via opening.

公开(公告)号：AT522953T

公开(公告)日：2011-09-15

申请号：AT03770552

申请日：2003-09-30

Applicant: IBM

Inventor： VOLANT RICHARD ,  PETRARCA KEVIN ,  WALKER GEORGE

IPC: H01R12/00

Abstract: A three-dimensional package consisting of a plurality of folded integrated circuit chips ( 100, 110, 120 ) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip ( 130 ) is provided with additional interconnect wiring to a substrate ( 500 ), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.

公开(公告)号：AT368934T

公开(公告)日：2007-08-15

申请号：AT01126761

申请日：2001-11-09

Applicant: IBM

Inventor： GROVES ROBERT A ,  HERBST BRIAN ,  JAHNES CHRISTOPHER ,  PETRARCA KEVIN ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H59/00

Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.

公开(公告)号：DE60129657T2

公开(公告)日：2008-05-21

申请号：DE60129657

申请日：2001-11-09

Applicant: IBM

Inventor： GROVES ROBERT A ,  HERBST BRIAN ,  JAHNES CHRISTOPHER ,  PETRARCA KEVIN ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H59/00

Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.

公开(公告)号：DE60129657D1

公开(公告)日：2007-09-13

申请号：DE60129657

申请日：2001-11-09

Applicant: IBM

Inventor： GROVES ROBERT A ,  HERBST BRIAN ,  JAHNES CHRISTOPHER ,  PETRARCA KEVIN ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H59/00

Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.

公开(公告)号：AT549741T

公开(公告)日：2012-03-15

申请号：AT04723639

申请日：2004-03-26

Applicant: IBM

Inventor： ANGELL DAVID ,  BEAULIEU FREDERIC ,  HISADA TAKASHI ,  KELLY ADREANNE ,  MCKNIGHT SAMUEL ,  MIYAI HIROMITSU ,  PETRARCA KEVIN ,  SAUTER WOLFGANG ,  VOLANT RICHARD ,  WEINSTEIN CAITLIN

IPC: H01L21/60 ,  H01L23/485

公开(公告)号：AT388480T

公开(公告)日：2008-03-15

申请号：AT02768707

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER ,  LUND JENNIFER ,  SAENGER KATHERINE ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H57/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H59/00

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

公开(公告)号：AT384685T

公开(公告)日：2008-02-15

申请号：AT02803310

申请日：2002-11-07

Applicant: IBM

Inventor： VOLANT RICHARD ,  BISSON JOHN ,  COTE DONNA R ,  DALTON TIMOTHY ,  GROVES ROBERT ,  PETRARCA KEVIN ,  STEIN KENNETH ,  SUBBANNA SESHADRI

IPC: B81C1/00 ,  B81B3/00 ,  H01H49/00 ,  H01H59/00

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.