公开(公告)号：JP2003229435A

公开(公告)日：2003-08-15

申请号：JP2003003523

申请日：2003-01-09

Applicant: IBM

Inventor： TORISHIA L BREEN ,  CLEVENGER LAWRENCE A ,  LEWIS L SUU ,  WANG LI-KONG ,  WONG KWONG HON

IPC: H01L51/05 ,  H01L21/00 ,  H01L21/336 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a flattened polymer transistor, and a structure thereof. SOLUTION: A completely flattened polymer thin film transistor is formed by processing a first portion of a device including a gate, a source, and a body element using a first flattened carrier. The thin film transistor is preferably formed with an organic material. For a gate dielectric a high K polymer can be employed to improve device performance. Then, a partly completed device structure is upside down, and is transferred to a second flattened carrier. A layer of wax or of a photosensitive organic material is deposited and is employed as a tentative bonding agent. A device including a body region is defined with an etching process. A contact to the device is formed with deposition of a conductive material and chemical/mechanical polishing. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002060979A

公开(公告)日：2002-02-28

申请号：JP2001117072

申请日：2001-04-16

Applicant: IBM

Inventor： TORISHIA L BREEN ,  PETA FRYER ,  RONALD WAYNE NUNES ,  MARY ELIZABETH ROTHWELL

IPC: B41K3/00 ,  C01G15/00 ,  C01G19/00 ,  C23C30/00 ,  G02F1/1333 ,  G03F7/00 ,  G03F7/16

Abstract: PROBLEM TO BE SOLVED: To provide a depositing method of a self-aggregate single molecule layer on a metal oxide using the micro-contact printing in the patterning substantially of the derivative and the surface, and a derivative substance manufactured thereby. SOLUTION: In the method for depositing a patterned film of IZO or ITO by the micro-contact printing and etching, a stamp is brought into contact with a surface of the IZO or ITO film to transfer the self-aggregate single molecule layer of the molecular kind of a fist pattern. The self-aggregate single molecule layer is continuous to an exposed portion of the IZO or ITO film surface of a second pattern. The IZO or ITO film chemically reacts with IZO or ITO. The self-aggregate single molecule layer is removed from a lower substrate following the second pattern by bringing the inert etchant into contact with the exposed portion of the IZO or ITO film.