公开(公告)号：JPH0817831A

公开(公告)日：1996-01-19

申请号：JP29101294

申请日：1994-11-25

Applicant: IBM

Inventor： KURAUSU DEIITORITSUCHI BEIYAA ,  UIRIAMU RESURII GASURII ,  SUTANREE RICHIYAADO MAAKAREUIT ,  ERITSUKU MENDERU ,  UIRIAMU JIYON PATORITSUKU ,  KIYASARIIN ARISU PERII ,  UIRIAMU ARON PURISUKIN ,  YAKOBU RAIZUMAN ,  POORU MAACHIN SHIYAIBURU ,  CHIYAARUZU RANBAATO SUTANDOREI

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768

Abstract: PURPOSE: To form a structure with a metal layer and a silicon dioxide layer on a same flat surface on a substrate. CONSTITUTION: A metal layer pattern 72 of Al-Cu is formed on a substrate 70, and a silicon dioxide layer 74 is adhered on it. The upper surface of the substrate is chemically and mechanically polished using a basic slurry containing silica particle until the surfaces of the metal layer pattern 72 and the silicon dioxide layer 74 become essentially the same flat surfaces.

公开(公告)号：JPS62102543A

公开(公告)日：1987-05-13

申请号：JP21422486

申请日：1986-09-12

Applicant: IBM

Inventor： KURAUSU DEIITORITSUCHI BEIYAA ,  UIRIAMU RESURII GASURII ,  SUTANREE RICHIYAADO MAAKAREUIT ,  ERITSUKU MENDERU ,  UIRIAMU JIYON PATORITSUKU ,  KIYASARIIN ARISU PERII ,  UIRIAMU ARON PURISUKIN ,  YAKOBU RAIZUMAN ,  POORU MAACHIN SHIYAIBURU ,  CHIYAARUZU RANBAATO SUTANDOREI

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768