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公开(公告)号：DE60106256D1
公开(公告)日：2004-11-11
申请号：DE60106256
申请日：2001-06-26
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor： KUNKEL GERHARD , BUTT SHAHID , RADENS CARL J
IPC: G11C11/4097 , H01L21/8242 , H01L27/108 , G11C11/00
Abstract: A dynamic random access memory is formed in a silicon chip in arrays of clusters, each of four cells in a single active area. Each active area is cross-shaped with vertical trenches at the four ends of the two crossbars. The central region of the active area where the two crossbars intersect serves as the common base region of the four transistors of the cluster. The top of the base region serves as a common drain for the four transistors and each transistor has a separate channel along the wall of its associated vertical trench that provides its storage capacitor. Each cluster includes a common bit line and four separate word-line contacts.
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公开(公告)号：DE102004021151A1
公开(公告)日：2005-02-24
申请号：DE102004021151
申请日：2004-04-29
Applicant: IBM , INFINEON TECHNOLOGIES AG
Inventor： SPENO PATRICK , WU CHUNG-HSI , BRUNNER THIMOTY ALLAN , BUTT SHAHID
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公开(公告)号：DE102004016704B4
公开(公告)日：2007-08-16
申请号：DE102004016704
申请日：2004-04-05
Applicant: IBM , INFINEON TECHNOLOGIES AG
Inventor： THOMAS ALAN C , PREUNINGER JUERGEN , BUTT SHAHID , KUNKEL GERHARD
Abstract: A projected image is formed during a material substrate. A photolithographic mask is illuminated with substantially coherent light at an oblique angle of incidence with respect to a surface of the photolithographic mask. The photolithographic mask includes a substantially transparent mask substrate and one or more lines and spaces patterns formed on the mask substrate and having a periodicity P. The mask substrate includes at least one phase shifting region. At least part of the light that is transmitted through the photolithographic mask is collected using one or more projection lenses which project the portion of the transmitted light onto the material substrate. The material substrate is disposed substantially parallel with, but at a distance from, a focal plane of the projection lens system. The phase shifting region of the mask substrate and the distance from the focal plane are selected such that a substantially focused image is projected onto the material substrate that includes the lines and spaces patterned but with a periodicity P/2.
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公开(公告)号：DE60106256T2
公开(公告)日：2005-10-20
申请号：DE60106256
申请日：2001-06-26
Applicant: INFINEON TECHNOLOGIES AG , IBM
Inventor： KUNKEL GERHARD , BUTT SHAHID , RADENS CARL J
IPC: G11C11/4097 , H01L21/8242 , H01L27/108 , G11C11/00
Abstract: A dynamic random access memory is formed in a silicon chip in arrays of clusters, each of four cells in a single active area. Each active area is cross-shaped with vertical trenches at the four ends of the two crossbars. The central region of the active area where the two crossbars intersect serves as the common base region of the four transistors of the cluster. The top of the base region serves as a common drain for the four transistors and each transistor has a separate channel along the wall of its associated vertical trench that provides its storage capacitor. Each cluster includes a common bit line and four separate word-line contacts.
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公开(公告)号：DE10240403A1
公开(公告)日：2004-03-11
申请号：DE10240403
申请日：2002-09-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , BUTT SHAHID
Abstract: Mask comprises a substrate (1), a first structural element (7) on the substrate, and an arrangement (20) of second structural elements. The second structural elements are arranged in the form of a matrix with lines and gap, have identical shape and size, and have a lateral expansion which is less than the minimal limit of resolution (40). An Independent claim is also included for a mask blank for the production of the mask.
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Patent Agency Ranking
公开(公告)号：DE10305617A1
公开(公告)日：2003-10-09
申请号：DE10305617
申请日：2003-02-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUTMANN ALOIS , LU ZHIJIAN , BUTT SHAHID
Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
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公开(公告)号：DE102004022595B4
公开(公告)日：2008-04-17
申请号：DE102004022595
申请日：2004-05-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BUTT SHAHID , ZAIDI SHOAIB HASAN
IPC: G01M11/02 , G01N21/41 , G01N21/47 , G01N21/956
Abstract: A method and system for detecting the quality of an alternating phase shift mask having a number of 180-degree phase shift areas alternating with a number of 0-degree phase shift areas is disclosed. In operation, a light source which provides wavelength-adjustable incident lights illuminates the incident lights on the alternating phase shift mask. The light outputs from boundaries between the 0-degree phase shift areas and the 180-degree phase shift areas of the alternating phase shift mask are detected. Relation curves of the wavelength of the incident light and a light intensity of the boundaries are then calculated. Phase errors of the alternating phase shift mask can thus be measured from the relation curves.
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公开(公告)号：DE10305617B4
公开(公告)日：2007-04-12
申请号：DE10305617
申请日：2003-02-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GUTMANN ALOIS , LU ZHIJIAN , BUTT SHAHID
Abstract: A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.
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公开(公告)号：DE102004022595A1
公开(公告)日：2005-02-03
申请号：DE102004022595
申请日：2004-05-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BUTT SHAHID , ZAIDI SHOAIB HASAN
IPC: G01N21/41 , G01N21/47 , G01N21/956 , G01M11/02 , G01N21/898
Abstract: A method and system for detecting the quality of an alternating phase shift mask having a number of 180-degree phase shift areas alternating with a number of 0-degree phase shift areas is disclosed. In operation, a light source which provides wavelength-adjustable incident lights illuminates the incident lights on the alternating phase shift mask. The light outputs from boundaries between the 0-degree phase shift areas and the 180-degree phase shift areas of the alternating phase shift mask are detected. Relation curves of the wavelength of the incident light and a light intensity of the boundaries are then calculated. Phase errors of the alternating phase shift mask can thus be measured from the relation curves.
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公开(公告)号：WO0225730A8
公开(公告)日：2002-12-27
申请号：PCT/US0142263
申请日：2001-09-24
Applicant: INFINEON TECHNOLOGIES CORP , IBM
Inventor： KUNKEL GERHARD , BUTT SHAHID , DIVAKARUNI RAMACHANDRAN , REITH ARMIN M , NAEEM MUNIR D
IPC: H01L21/8242
CPC classification number: H01L27/10864 , H01L27/1087 , H01L27/10891
Abstract: A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) (104) is formed over a semiconductor region (e.g., a silicon substrate) (100). The first layer is patterned to remove portions of the first material. A second material (e.g., oxide) (112, 120) can then be deposited to fill the portions where the first material was removed. After removing the remaining portions of the first layer of first material, a trench (122) can be etched in the semiconductor region. The trench would be substantially aligned to the second material.
Abstract translation: 形成沟槽的方法可用于制造动态随机存取存储器（DRAM）单元。 在一个方面，在半导体区域（例如，硅衬底）（100）上形成第一材料（例如，多晶硅）（104）的第一层。 图案化第一层以去除第一材料的部分。 然后可以沉积第二材料（例如氧化物）（112,120）以填充去除第一材料的部分。 在去除第一材料的第一层的剩余部分之后，可以在半导体区域中蚀刻沟槽（122）。 沟槽将基本上对准第二材料。
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