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    Particle-optical projection device
    1.
    发明专利
    Particle-optical projection device 有权
    粒子投影设备

    公开(公告)号：JP2005268788A

    公开(公告)日：2005-09-29

    申请号：JP2005069236

    申请日：2005-03-11

    Applicant: Ims Nanofabrication Gmbh ,  アイエムエス ナノファブリカツィオン ゲーエムベーハーIMS Nanofabrication GmbH

    Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  NOWAK ROBERT ,  PLATZGUMMER ELMAR ,  STENGL GERHARD DR

    IPC: H01L21/027 ,  G03F7/20 ,  G11B7/09 ,  H01J37/02 ,  H01J37/147 ,  H01J37/15 ,  H01J37/20 ,  H01J37/21 ,  H01J37/304 ,  H01J37/317

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/10 ,  H01J2237/216 ,  H01J2237/30455

    Abstract: PROBLEM TO BE SOLVED: To provide a method of arbitrarily changing an image position and a magnification to correct the deviation between the image and target positions, in the direction of the optical axis (Z-direction).
    SOLUTION: In the particle-optical projection device (32), a pattern (B) is depicted on a target tp by energy-property charged particles. This pattern is made to emerge as a patterned beam pb of the charged particles, that emerge from a surface of a material body via at least one crossover c and is focused into an image S having a given magnitude and distortions. In order to correct the deviation in the Z-direction of the image S position from an actual position of the target tp, without changing the magnitude of the image S, the present projection device is provided with a position-detecting means ZD for measuring the Z positions of the target tp at several points and a control means 33 for calculating a correction value cr of a selected lens parameter of the particle-optical lens L2, arranged at the last stage and controlling the lens parameter, in accordance with the connection value.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种任意改变图像位置和倍率以在光轴方向（Z方向）上校正图像与目标位置之间的偏差的方法。 解决方案：在粒子光学投影装置（32）中，通过能量带电粒子在目标tp上示出了图案（B）。 该图案被形成为带电粒子的图案化束pb，其经由至少一个交叉c从材料体的表面出射，并被聚焦成具有给定幅度和失真的图像S. 为了校正图像S位置的Z方向与目标tp的实际位置的偏差，而不改变图像S的大小，本投影装置设置有位置检测装置ZD，用于测量 在多个点处的目标tp的Z位置和用于根据连接值计算布置在最后阶段并控制透镜参数的粒子光学透镜L2的选定透镜参数的校正值cr的控制装置33 。 版权所有（C）2005，JPO＆NCIPI

    Maskless particle-beam system for exposing a pattern on a substrate
    3.
    发明专利
    Maskless particle-beam system for exposing a pattern on a substrate 未知

    公开(公告)号：GB2412494A

    公开(公告)日：2005-09-28

    申请号：GB0512347

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/30 ,  H01J37/305

    Abstract: A method for forming a pattern on a surface of a substrate (41) by means of a beam (lb, pb) of energetic electrically charged particles, comprising the following steps: ```producing said particle beam, ```directing said particle beam (lb, pb) through a pattern definition means (102) producing a number of beamlets (bm) using an aperture array means (203) having a plurality of regularly arranged apertures (230) of substantially identical shape defining the shape of said beamlets (bin), and using a blanking means (202) to switch off the passage of selected beamlets (bin), the others forming, as a whole, a patterned particle beam, and ```projecting said patterned particle beam onto said substrate (41) surface to form an image of those apertures (230) which are switched on, each aperture (230) corresponding to an image element on the substrate (41) surface during a uniform exposure time, ```wherein a subset of the apertures (230) is switched on during a fraction of the exposure time and switched off for the remaining fraction of the exposure time, thus causing a fractional exposure at a value lower than a threshold of exposure of image elements on the substrate (41) surface, which threshold is lower than or equal to the value corresponding to a full exposure as caused by an aperture (230) switched on during the full exposure time.

    Maskless particle-beam system for exposing a pattern on a substrate
    5.
    发明专利
    Maskless particle-beam system for exposing a pattern on a substrate 未知

    公开(公告)号：GB2389454B

    公开(公告)日：2005-08-31

    申请号：GB0300693

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Maskless particle beam system for exposing pattern on a substrate
    6.
    发明专利
    Maskless particle beam system for exposing pattern on a substrate 未知

    公开(公告)号：GB2389454A

    公开(公告)日：2003-12-10

    申请号：GB0300693

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

    Abstract: A device for defining a pattern, for use in a particle-beam exposure apparatus, said device adapted to be irradiated with a beam 1b, pb of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means 203 and a blanking means 202. The aperture array means 203 has a plurality of apertures 230 of identical shape defining the shape of beamlets bm. The blanking means 202 serves to switch off the passage of selected beamlets; it has a plurality of openings 220, each corresponding to a respective aperture 230 of the aperture array means 203 and being provided with a deflection means 221 controllable to deflect particles radiated through the opening off their path p1 to an absorbing surface within said exposure apparatus. The apertures are arranged on the blanking and aperture array means 202, 203 within a pattern definition field being composed of a plurality of staggered lines p1 of apertures. In front of the blanking means 202 as seen in the direction of the particle beam, a cover means 201 is provided having a plurality of openings 210, each corresponding to a respective opening 230 of the blanking means and having a width W1 which is smaller than the width W2 of the openings 220 of the blanking array means.

    Pattern-definition device for maskless particle-beam exposure apparatus
    7.
    发明专利
    Pattern-definition device for maskless particle-beam exposure apparatus 未知

    公开(公告)号：GB2408383B

    公开(公告)日：2006-05-10

    申请号：GB0423150

    申请日：2004-10-18

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： LAMMER-PACHLINGER WOLFGANG ,  LAMMER GERTRAUD ,  CHALUPKA ALFRED

    IPC: H01J37/305 ,  H01J37/04 ,  H01J37/317 ,  H01J37/147 ,  H01L21/027

    Abstract: In a pattern-definition device ( 102 ) for use in a particle-beam exposure apparatus, a beam of electrically charged particles is patterned through a plurality of apertures. The device comprises at least one deflector array means having a plurality of openings surrounding the beamlets, wherein for each opening are provided at least two deflecting electrodes to which different electrostatic potentials are appliable, thus correcting the path of the beamlet(s) passing through the respective opening according to a desired path through the device ( 102 ). According to a partition of the plurality of apertures into a set of subfields (Aij), the deflecting electrodes belonging to the same subfield (Aij) have common electric supplies. Thus, the electrostatic potentials of the deflecting electrodes belonging to the same subfield (Aij) are constant or linearly interpolated between basic potentials fed at basic points (Pij) of the respective subfield.

    Pattern-definition device for maskless particle beam exposure apparatus
    9.
    发明专利
    Pattern-definition device for maskless particle beam exposure apparatus 未知

    公开(公告)号：GB2408383A

    公开(公告)日：2005-05-25

    申请号：GB0423150

    申请日：2004-10-18

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： LAMMER-PACHLINGER WOLFGANG ,  LAMMER GERTRAUD ,  CHALUPKA ALFRED

    IPC: H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/147 ,  H01J37/04

    Abstract: In a pattern-definition device (102) for use in a particle-beam exposure apparatus, a beam of electrically charged particles is patterned through a plurality of apertures. The device comprises at least one deflector array means having a plurality of openings surrounding the beamlets, wherein for each opening are provided at least two deflecting electrodes to which different electrostatic potentials are appliable, thus correcting the path of the beamlet(s) passing through the respective opening according to a desired path through the device (102). According to a partition of the plurality of apertures into a set of subfields (Aij), the deflecting electrodes belonging to the same subfield (Aij) have common electric supplies. Thus, the electrostatic potentials of the deflecting electrodes belonging to the same subfield (Aij) are constant or linearly interpolated between basic potentials fed at basic points (Pij) of the respective subfield.

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