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    Particle-optical electrostatic lens
    1.
    发明专利
    Particle-optical electrostatic lens 有权
    颗粒光学静电镜

    公开(公告)号：JP2005108842A

    公开(公告)日：2005-04-21

    申请号：JP2004281985

    申请日：2004-09-28

    Applicant: Ims Nanofabrication Gmbh ,  イーエムエス ナノファブリカツィオン ゲーエムベーハー

    Inventor： STENGL GERHARD ,  BUSCHBECK HERBERT ,  LAMMER GERTRAUD

    IPC: H01J37/09 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J2237/3175

    Abstract: PROBLEM TO BE SOLVED: To make magnetic shield of an electrostatic lens system easy by reducing a space especially occupied by a lens. SOLUTION: In a charged particle beam exposure device, an electrostatic lens (ML) has some (at least three) electrodes surrounding a particle beam optical path with rotational symmetry (EFR, EM, EFN), and the electrodes are coaxially arranged on a common optical axis indicating a center of the optical path and has different electrostatic potentials applied through a power supply system. At least one sub set (a partial aggregate) of the electrode (EM) forms an electrode array realized as a series of electrodes continuously arranged along the optical axis and in a substantially equivalent shape. An outside part of the electrode (EM) of the electrode array has outside parts (OR) of corresponding opposite faces (f1, f2) respectively facing toward the next and the preceding electrodes. A length of the electrode (EM) is preferably at least 4.1 times (3 times) of an inner radius (ril) of the faces (fi, f2). COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：通过减少特别被镜头占据的空间，使静电透镜系统的磁屏蔽变得容易。 解决方案：在带电粒子束曝光装置中，静电透镜（ML）具有围绕具有旋转对称性（EFR，EM，EFN）的粒子束光路的一些（至少三个）电极，并且电极同轴布置 在指示光路中心的公共光轴上，并且具有通过电源系统施加的不同的静电电位。 电极（EM）的至少一个子集（部分聚集体）形成电极阵列，该电极阵列被实现为沿着光轴连续排列并以基本上等效的形状的一系列电极。 电极阵列的电极（EM）的外部部分具有分别面向下一个电极和前一个电极的对应的相对面（f1，f2）的外部部分（OR）。 电极（EM）的长度优选为面（fi，f2）的内半径（ril）的至少4.1倍（3倍）。 版权所有（C）2005，JPO＆NCIPI

    Method for compensating magnetic field in operating area
    2.
    发明专利
    Method for compensating magnetic field in operating area 有权
    操作区域磁场补偿方法

    公开(公告)号：JP2005252254A

    公开(公告)日：2005-09-15

    申请号：JP2005052280

    申请日：2005-02-28

    Applicant: Ims Nanofabrication Gmbh ,  アイエムエス ナノファブリケイション ゲエムベーハー

    Inventor： STENGL GERHARD ,  BUSCHBECK HERBERT

    IPC: H01J37/20 ,  G05F7/00 ,  H01H47/00 ,  H01L21/027

    CPC classification number: G05F7/00

    Abstract: PROBLEM TO BE SOLVED: To compensate magnetic fields using magnetic field sensors set in an operating area (particle beam) where the magnetic fields must be compensated.
    SOLUTION: Magnetic fields sensors S1, S2 in the operating area and a compensation coil Hh mechanism enclosing the operating area are used for the magnetic field compensation. The magnetic fields are in different positions, preferably in the positions opposite to each other with respect to the axis of symmetry of the operating area, and measured by at least two sensors S1, S2 generating respective sensor signals s1, s2. The sensor signals s1, s2 of the sensors S1, S2 are superposed to create feedback signals ms, fs, which are converted into a drive signal d1 by a control means. The drive signal is then used to control the direction of the magnetic field of at least one compensation coil (Hh).
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：使用设置在必须补偿磁场的操作区域（粒子束）中的磁场传感器来补偿磁场。

    解决方案：操作区域中的磁场传感器S1，S2和围绕操作区域的补偿线圈Hh机构用于磁场补偿。 磁场位于不同的位置，优选地在相对于操作区域的对称轴线彼此相对的位置处，并且由至少两个产生各个传感器信号s1，s2的传感器S1，S2测量。 传感器S1，S2的传感器信号s1，s2被叠加以产生由控制装置转换成驱动信号d1的反馈信号ms，fs。 然后使用驱动信号来控制至少一个补偿线圈（Hh）的磁场方向。 版权所有（C）2005，JPO＆NCIPI

    Charged-particle multibeam exposure device
    3.
    发明专利
    Charged-particle multibeam exposure device 有权
    充电颗粒多孔曝光装置

    公开(公告)号：JP2005129944A

    公开(公告)日：2005-05-19

    申请号：JP2004305981

    申请日：2004-10-20

    Applicant: Ims Nanofabrication Gmbh ,  イーエムエス ナノファブリカツィオン ゲーエムベーハー

    Inventor： STENGL GERHARD ,  PLATZGUMMER ELMAR ,  LOESCHNER HANS

    IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

    Abstract: PROBLEM TO BE SOLVED: To provide a charged-particle multibeam exposure device that enables a high throughput. SOLUTION: The charged-particle multibeam exposure device 1 for the exposure of a target 41 employs a plurality of beams of charged particles that travel along collimated beam paths directed toward a target 41. An illumination system 10, a forming means 20 and a projection optical system 30 are provided for each of the particle beams. The illumination system 10 and projection optical system 30 are composed of particle-optical lenses having lens elements common to more than one particle beam. A pattern defining means 20 is made up of a blanking means that defines a multitude of beamlets included in the respective particle beams to configure the form of the projection on the target 41 in a desired pattern, by permitting the beamlets to pass through exclusively a plurality of apertures that serve to define the forms of the beamlets transmitted therethrough, and further switches off the passage of selected beamlets from the respective paths. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供能够实现高产量的带电粒子多光束曝光装置。 解决方案：用于曝光目标41的带电粒子多光束曝光装置1采用沿着朝向目标41的准直光束路径行进的多个带电粒子束。照明系统10，形成装置20和 为每个粒子束提供投影光学系统30。 照明系统10和投影光学系统30由具有多于一个粒子束共有的透镜元件的粒子光学透镜构成。 图案定义装置20由消隐装置构成，该消隐装置限定包括在各个粒子束中的多个子束，以通过允许子束仅仅通过多个子镜来将目标41上的投影的形状设计成所需的图案 用于限定通过其穿过的子束的形式，并且进一步切断所选择的子束从相应路径的通过。 版权所有（C）2005，JPO＆NCIPI

    CHARGED-PARTICLE EXPOSURE APPARATUS
    5.
    发明申请
    CHARGED-PARTICLE EXPOSURE APPARATUS 审中-公开
    充电粒子曝光装置

    公开(公告)号：WO2006086815A2

    公开(公告)日：2006-08-24

    申请号：PCT/AT2006000060

    申请日：2006-02-16

    Applicant: IMS NANOFABRICATION GMBH ,  PLATZGUMMER ELMAR ,  CERNUSCA STEFAN ,  STENGL GERHARD

    Inventor： PLATZGUMMER ELMAR ,  CERNUSCA STEFAN ,  STENGL GERHARD

    IPC: H01J37/317

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31788 ,  H01J2237/31793

    Abstract: A particle-beam projection processing apparatus (100) for irradiating a target (41), with an illumination system (101) for forming a wide-area illuminating beam (Ip) of energetic electrically charged particles; a pattern definition means (102) for positioning an aperture pattern (21) in the path of the illuminating beam; and a projection system (103) for projecting the beam thus patterned (pb) onto a target (41) to be positioned after the projection system. A foil (34, 35) located across the path of the patterned beam (pb) is positioned between the pattern definition means (102) and the position of the target (41) at a location close to an image (i0) of the aperture pattern (21) formed by the projection system.

    Abstract translation: 一种用于对目标物（41）照射用于形成能量带电粒子的广域照明光束（Ip）的照明系统（101）的粒子束投影处理装置（100） 用于将光圈图案（21）定位在照明光束的路径中的图案定义装置（102） 以及投影系统（103），用于将如此图案化的光束（pb）投影到目标（41）上以在投影系统之后定位。 位于图案化光束（pb）的路径上的箔片（34,35）位于图案定义装置（102）和目标（41）的靠近孔径图像（i0）的位置之间 图案（21）由投影系统形成。

    Maskless particle-beam system for exposing a pattern on a substrate
    6.
    发明专利
    Maskless particle-beam system for exposing a pattern on a substrate 未知

    公开(公告)号：GB2412494A

    公开(公告)日：2005-09-28

    申请号：GB0512347

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/30 ,  H01J37/305

    Abstract: A method for forming a pattern on a surface of a substrate (41) by means of a beam (lb, pb) of energetic electrically charged particles, comprising the following steps: ```producing said particle beam, ```directing said particle beam (lb, pb) through a pattern definition means (102) producing a number of beamlets (bm) using an aperture array means (203) having a plurality of regularly arranged apertures (230) of substantially identical shape defining the shape of said beamlets (bin), and using a blanking means (202) to switch off the passage of selected beamlets (bin), the others forming, as a whole, a patterned particle beam, and ```projecting said patterned particle beam onto said substrate (41) surface to form an image of those apertures (230) which are switched on, each aperture (230) corresponding to an image element on the substrate (41) surface during a uniform exposure time, ```wherein a subset of the apertures (230) is switched on during a fraction of the exposure time and switched off for the remaining fraction of the exposure time, thus causing a fractional exposure at a value lower than a threshold of exposure of image elements on the substrate (41) surface, which threshold is lower than or equal to the value corresponding to a full exposure as caused by an aperture (230) switched on during the full exposure time.

    Particle-optic electrostatic lens
    7.
    发明专利
    Particle-optic electrostatic lens 未知

    公开(公告)号：GB2406704B

    公开(公告)日：2007-02-07

    申请号：GB0421004

    申请日：2004-09-22

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： STENGL GERHARD ,  BUSCHBECK HERBERT ,  LAMMER GERTRAUD

    IPC: H01J37/09 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027

    Abstract: In a charged-particle beam exposure device, an electrostatic lens (ML) comprises several (at least three) electrodes with rotational symmetry (EFR, EM, EFN) surrounding a particle beam path; the electrodes are arranged coaxially on a common optical axis representing the center of said particle beam path and are fed different electrostatic potentials through electric supplies. At least a subset of the electrodes (EM) form an electrode column realized as a series of electrodes of substantially equal shape arranged in consecutive order along the optical axis, wherein outer portions of said electrodes (EM) of the electrode column have outer portions (OR) of corresponding opposing surfaces (f 1 , f 2 ) facing toward the next and previous electrodes, respectively. Preferably, the length of the electrode column is at least 4.1 times (3 times) the inner radius (ri 1 ) of said surfaces (f 1 , f 2 ).

    Maskless particle-beam system for exposing a pattern on a substrate
    9.
    发明专利
    Maskless particle-beam system for exposing a pattern on a substrate 未知

    公开(公告)号：GB2389454B

    公开(公告)日：2005-08-31

    申请号：GB0300693

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Maskless particle beam system for exposing pattern on a substrate
    10.
    发明专利
    Maskless particle beam system for exposing pattern on a substrate 未知

    公开(公告)号：GB2389454A

    公开(公告)日：2003-12-10

    申请号：GB0300693

    申请日：2003-01-13

    Applicant: IMS NANOFABRICATION GMBH

    Inventor： PLATZGUMMER ELMAR ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT ,  CHALUPKA ALFRED ,  LAMMER GERTRAUD ,  BUSCHBECK HERBERT ,  NOWAK ROBERT ,  WINDISCHBAUER TILL

    IPC: H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

    Abstract: A device for defining a pattern, for use in a particle-beam exposure apparatus, said device adapted to be irradiated with a beam 1b, pb of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means 203 and a blanking means 202. The aperture array means 203 has a plurality of apertures 230 of identical shape defining the shape of beamlets bm. The blanking means 202 serves to switch off the passage of selected beamlets; it has a plurality of openings 220, each corresponding to a respective aperture 230 of the aperture array means 203 and being provided with a deflection means 221 controllable to deflect particles radiated through the opening off their path p1 to an absorbing surface within said exposure apparatus. The apertures are arranged on the blanking and aperture array means 202, 203 within a pattern definition field being composed of a plurality of staggered lines p1 of apertures. In front of the blanking means 202 as seen in the direction of the particle beam, a cover means 201 is provided having a plurality of openings 210, each corresponding to a respective opening 230 of the blanking means and having a width W1 which is smaller than the width W2 of the openings 220 of the blanking array means.

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