公开(公告)号：JP2004159339A

公开(公告)日：2004-06-03

申请号：JP2003377295

申请日：2003-11-06

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： MARKSTEINER STEPHAN ,  FATTINGER GERNOT ,  AIGNER ROBERT ,  KAITILA JYRKI

IPC: H03H9/56 ,  H03H9/17 ,  H03H9/58

CPC classification number: H03H9/175

Abstract: PROBLEM TO BE SOLVED: To provide a BAW (bulk acoustic wave) resonator which has a plurality of layers to increase the function of the resonator.
SOLUTION: The BAW resonator includes a piezoelectric layer 102, a first electrode 104 on a front surface, a second electrode 106 on the opposite surface, a substrate 108, and an acoustic reflector 110 provided between the substrate 108 and the second electrode 106. The acoustic reflector 110 has a plurality of alternately-arranged layers made of a material having a high acoustic impedance and made of a material having a low acoustic impedance. The function of the acoustic reflector 110 is determined by the reflectivity of longitudinal wave and the reflectivity of traverse wave which exist in the BAW resonator 100 with a resonant frequency of the BAW resonator 100. The acoustic reflector 110 and layers 106a and 106b provided between the acoustic reflector 110 and the piezoelectric layer 102 are chosen so that transmittance of the longitudinal wave and transmittance of the traverse wave at the resonant frequencyare less than -10dB, referring to the number of these layers, the material and thickness thereof.
COPYRIGHT: (C)2004,JPO

公开(公告)号：DE10150253A1

公开(公告)日：2003-04-30

申请号：DE10150253

申请日：2001-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG ,  FATTINGER GERNOT

IPC: H03H9/58 ,  H01L41/083 ,  H03H9/15

Abstract: Piezoelectric component comprises a layer stack (50) made from piezoelectric layers (10,12) and electrodes (30,32,34). The piezoelectric layers are arranged within the layer stack so that each layer is arranged between two neighboring electrodes. All electrodes are either connected to a signal input or a signal output. Preferred Features: The layer stack comprises two piezoelectric layers and three electrodes or three piezoelectric layers and four electrodes. The layer stack is acoustically insulated from the substrate by a hollow chamber.

公开(公告)号：DE102006023165B4

公开(公告)日：2008-02-14

申请号：DE102006023165

申请日：2006-05-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FATTINGER GERNOT

IPC: H03H9/15

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

公开(公告)号：DE102004054895B4

公开(公告)日：2007-04-19

申请号：DE102004054895

申请日：2004-11-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FATTINGER GERNOT ,  KAITILA JYRKI

IPC: H03H9/56 ,  H03H3/02 ,  H03H9/205

Abstract: A thin layer bulk-acoustic wave (BAW) filter has at least one coupled resonator filter (CRF) section and at least one conductor- or grid-filter section in which the CRF-section has at least two coupled resonators (2,4). The CRF section and conductor- or grid-filter section are integrated on a common substrate (7). An independent claim a method for manufacturing a thin-layer BAW filter.

公开(公告)号：DE102006019505B4

公开(公告)日：2008-01-03

申请号：DE102006019505

申请日：2006-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FATTINGER GERNOT ,  DIEFENBECK KLAUS

IPC: H03H3/02

公开(公告)号：DE102004054895A1

公开(公告)日：2006-05-24

申请号：DE102004054895

申请日：2004-11-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FATTINGER GERNOT ,  KAITILA JYRKI

IPC: H03H9/56 ,  H03H3/02 ,  H03H9/205

Abstract: A thin layer bulk-acoustic wave (BAW) filter has at least one coupled resonator filter (CRF) section and at least one conductor- or grid-filter section in which the CRF-section has at least two coupled resonators (2,4). The CRF section and conductor- or grid-filter section are integrated on a common substrate (7). An independent claim a method for manufacturing a thin-layer BAW filter.

公开(公告)号：DE102006019505A1

公开(公告)日：2007-10-31

申请号：DE102006019505

申请日：2006-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FATTINGER GERNOT ,  DIEFENBECK KLAUS

IPC: H03H3/02

Abstract: The method involves providing a base material (100), and producing a laminated structure (133) on the base material, where the structure has a conductive material. A protective layer (140) is produced on the structure. A planarization layer is applied on the layer (140) and the base material. A section of the layer (140) is formed by structuring of the planarization layer, where the layers are laterally adjoined and form a planar surface. The layer (140) and an appropriate part of the planarization layer are removed in order to obtain a planar surface of the layers.

公开(公告)号：DE10262056A1

公开(公告)日：2004-11-04

申请号：DE10262056

申请日：2002-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  FATTINGER GERNOT ,  AIGNER ROBERT ,  KAITILA JYRKI

IPC: H03H9/56 ,  H03H9/17 ,  H03H9/58 ,  H03H9/15 ,  H03H9/54

Abstract: The multilayer acoustic reflector (110) for the BAW (Bulk Acoustic Wave) resonator has multiple layers (112-120) of alternate high acoustic impedance and low acoustic impedance material. It is mounted under a piezoelectric layer (102) with electrodes on top (104) and bottom (106) surfaces. The reflector is formed on top of a substrate layer (108). The configuration of the reflector layers is chosen so that the transmissivity for longitudinal and shear waves less than -10 dB in the region of the resonance frequency.

公开(公告)号：DE10262056B4

公开(公告)日：2008-08-28

申请号：DE10262056

申请日：2002-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  FATTINGER GERNOT ,  AIGNER ROBERT ,  KAITILA JYRKI

IPC: H03H9/15 ,  H03H9/56 ,  H03H9/17 ,  H03H9/54 ,  H03H9/58

Abstract: The multilayer acoustic reflector (110) for the BAW (Bulk Acoustic Wave) resonator has multiple layers (112-120) of alternate high acoustic impedance and low acoustic impedance material. It is mounted under a piezoelectric layer (102) with electrodes on top (104) and bottom (106) surfaces. The reflector is formed on top of a substrate layer (108). The configuration of the reflector layers is chosen so that the transmissivity for longitudinal and shear waves less than -10 dB in the region of the resonance frequency.

公开(公告)号：DE10251876B4

公开(公告)日：2008-08-21

申请号：DE10251876

申请日：2002-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  FATTINGER GERNOT ,  AIGNER ROBERT ,  KAITILA JYRKI

IPC: H03H9/15 ,  H03H9/56 ,  H03H9/17 ,  H03H9/54 ,  H03H9/58

Abstract: The multilayer acoustic reflector (110) for the BAW (Bulk Acoustic Wave) resonator has multiple layers (112-120) of alternate high acoustic impedance and low acoustic impedance material. It is mounted under a piezoelectric layer (102) with electrodes on top (104) and bottom (106) surfaces. The reflector is formed on top of a substrate layer (108). The configuration of the reflector layers is chosen so that the transmissivity for longitudinal and shear waves less than -10 dB in the region of the resonance frequency.