公开(公告)号：WO0052750A3

公开(公告)日：2001-08-09

申请号：PCT/DE0000677

申请日：2000-03-03

Applicant: INFINEON TECHNOLOGIES AG ,  HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

Inventor： HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

IPC: H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L21/225 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802

Abstract: The invention relates to a method for producing a body area for a vertical MOS transistor array in a semiconductor body, wherein the body area has at least one channel region disposed between the source area and the drain area and borders on a gate electrode. A first implantation of doping material is effected in the semiconductor body, wherein the maximum of doping material of the first implantation is placed in the back part of the channel region (11) within the semiconductor body. At least a second implantation of doping material is then effected with a smaller dose than in the first implantation, wherein the maximum of doping material of the second implantation lies within the semiconductor body below the maximum of doping material of the first implantation. Subsequently, the doping material is diffused off.

Abstract translation: 描述一种用于在半导体本体中的垂直MOS晶体管布置，其中所述体区包括至少一个沟道区，设置于栅极电极的源极区域和漏极区域和相邻之间产生的体区的过程。 有掺杂剂至该半导体本体的第一植入物，植入最大与沟道区（11）在半导体本体中的第一植入的复位。 接着进行掺杂材料中的至少一个第二注入具有比第一注入较低的剂量，植入低于最大值的最大注入所述第一注入的半导体主体内的第二植入的位置。 随后，执行掺杂材料的向外扩散。

公开(公告)号：AT510300T

公开(公告)日：2011-06-15

申请号：AT00918684

申请日：2000-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

IPC: H01L21/336 ,  H01L21/225 ,  H01L21/265 ,  H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

Abstract: Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step, and then diffusion of the doping material. Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step. The body area has at least one channel region (11) arranged between a source region (10) and a drain region (2, 3) of second conductivity and bordering a gate electrode (5). The body area and the source region extend from a first surface (14) into the semiconductor body, and the drain region extends from a second surface (15) into the semiconductor body. The dosage of the first implantation is 10-1000 times larger than that of the second implantation.