Abstract:
PROBLEM TO BE SOLVED: To provide means for preventing such a phenomenon as particles aggregate in the opening region of the slurry output in a CMP system arrangement. SOLUTION: The valve means having a slurry outlet opening in a chemical mechanical polishing system, more specifically a chemical mechanical polishing system of a semiconductor wafer in the production of DRAM, characterizes a resilient barrier wall (2) covering the slurry outlet opening (1) and having at least one automatic closing opening (3) wherein the opening can be shifted to a position for passing slurry and when slurry does not flow, the opening is shifted automatically to a position for blocking slurry.
Abstract:
PROBLEM TO BE SOLVED: To provide a CMP process that brings about no dishing effect and which is free of variations in matter removal rate. SOLUTION: The present invention relates to an abrasive cushion material and a process of a wet-chemical grinding of a substrate surface. The abrasive cushion consists of a polymer matrix having a specified water-solubility and the specified water-solubility is realized by non-polar or polar repeat units in the polymer. COPYRIGHT: (C)2004,JPO
Abstract:
The invention relates to a cleaning solution for semiconductor wafers in the back-end-of-line (BEOL). Said solution contains water, tetramethylammonium hydroxide (TMAH) and ethylene glycol. The invention also relates to the use of such cleaning solutions and a method for cleaning semiconductor wafers in the BEOL.
Abstract:
Vorrichtung, umfassend: eine Zentrifuge (42) mit einem Fenster (50), eine innerhalb der Zentrifuge (42) angeordnete Zentrifugentrommel (46) mit einem Waferhalter (48a–48i) zur Halterungeines Wafers (20a–20i) mit Lothügeln (32a–32i), und eine Wärmequelle (44) zur Übertragung von Wärme durch das Fenster (50) hindurch auf die Lothügel (32a–32i) zum Aufschmelzen der Lothügel (32a–32i) während Zentrifugalkräfte auf die Lothügel (32a–32i) und den Wafer (20a–20i) wirken, so dass verlängerte Lothügel (60a–60i) erzeugt werden können.
Abstract:
In semiconductor manufacturing process, air is monitored for presence of corrosive substances, starting with the presentation of a wafer with a surface structure and capture of the first commensurate image. The wafer is repeatedly heated and cooled a given number of times to temperatures above and below the dew point, and the second surface structure image captured and compared with the first. The image of the exposed wafer is compared with the original at regular intervals using a raster electron microscope or other suitable detection and measuring instrument. The wafer is exposed to ambient air at between less than 5C and more than 25C and a relative humidity of 35 to 45%. The images are captured at eight-hour intervals.
Abstract:
A valve for a slurry outlet opening in an installation for chemical mechanical polishing, in particular of semiconductor wafers in DRAM production, includes an elastic diaphragm, which covers the slurry outlet opening and has at least one self-closing opening. It is possible for the opening to be moved into a feedthrough position for the slurry by flowing slurry and to be automatically moved into a blocking position for the slurry when the slurry is not flowing. A CMP installation having such a valve is also provided. This creates a simple way of preventing particle agglomerations in the region of the fluid outlet opening of a CMP installation.
Abstract:
A lithographic projection photo-mask (5) comprises: (a) a transparent substrate (10) with a pattern (14) of structural elements (16); (b) a frame (18), on the substrate outside the pattern; (c) a protective film (20) above the substrate, forming an enclosed volume filled with purging gas; and (d) an arrangement (32) of absorber within the enclosed volume, to remove harmful materials from the gas and inhibit crystal formation on the mask. A photo-mask (5) for lithographic projection comprises: (a) a transparent substrate (10), provided on its front with a pattern (14) of absorbing, partially absorbing or phase-shifting structural elements (16); (b) a frame (18), located on the front side of the substrate outside the pattern; (c) a protective film (20), located above the substrate on the frame, forming an enclosed volume filled with purging gas; and (d) an absorber arrangement (32), including absorber located in the frame region within the enclosed volume, for removing harmful materials from the purging gas to inhibit crystal formation on the mask. An independent claim is included for a method for using the mask in an exposure plant, involving: (A) supplying the mask into an exposure device from a protective container; (B) carrying out one or more exposure processes in the exposure device using light from an ultraviolet source; and (C) withdrawing the mask from the exposure device into the protective container.
Abstract:
A wafer level package comprises a chip that has a thickness that is significantly less than a thickness at which the chip can be fabricated; a fiber reinforced synthetic resin sheet, where the chip is bonded, forming a solidly bonded assembly that cannot come apart in the customary temperature range; and a polymer coating overlying edges of the chip and at least a portion of edges of the fiber reinforced synthetic resin sheet. A wafer level package comprises a chip (1) that has a thickness that is significantly less than a thickness at which the chip can be fabricated; a fiber reinforced synthetic resin sheet (4), where the chip is bonded onto the fiber reinforced synthetic resin sheet, forming a solidly bonded assembly (5) that cannot come apart in the customary temperature range; and a polymer coating overlying edges of the chip and at least a portion of edges (6) of the fiber reinforced synthetic resin sheet. An independent claim is included for a method for producing a wafer level package, comprising providing a semiconductor wafer; thinning the wafer to an intended thickness; adhesively bonding a wafer-sized fiber reinforced synthetic resin sheet onto the back side of the wafer to form a wafer assembly that includes the wafer and the fiber reinforced synthetic resin sheet; sawing into the wafer assembly from the chip side to a predetermined depth to form kerfs; applying a polymer to the chip side of the wafer assembly so that inner surfaces of the kerfs are coated with the polymer; and sawing the wafer assembly into individual chips.