公开(公告)号：DE102005052046A1

公开(公告)日：2007-05-03

申请号：DE102005052046

申请日：2005-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NEES DIETER ,  BAUCH LOTHAR ,  GEYER STEFAN ,  BRUCH JENS UWE ,  KLINGBEIL PATRICK ,  SCHUMACHER KARL ,  STAECKER JENS ,  SCHIWON ROBERTO ,  HOMMEN HEIKO ,  BONNESS ANJA

IPC: G03F1/64

Abstract: A lithographic projection photo-mask (5) comprises: (a) a transparent substrate (10) with a pattern (14) of structural elements (16); (b) a frame (18), on the substrate outside the pattern; (c) a protective film (20) above the substrate, forming an enclosed volume filled with purging gas; and (d) an arrangement (32) of absorber within the enclosed volume, to remove harmful materials from the gas and inhibit crystal formation on the mask. A photo-mask (5) for lithographic projection comprises: (a) a transparent substrate (10), provided on its front with a pattern (14) of absorbing, partially absorbing or phase-shifting structural elements (16); (b) a frame (18), located on the front side of the substrate outside the pattern; (c) a protective film (20), located above the substrate on the frame, forming an enclosed volume filled with purging gas; and (d) an absorber arrangement (32), including absorber located in the frame region within the enclosed volume, for removing harmful materials from the purging gas to inhibit crystal formation on the mask. An independent claim is included for a method for using the mask in an exposure plant, involving: (A) supplying the mask into an exposure device from a protective container; (B) carrying out one or more exposure processes in the exposure device using light from an ultraviolet source; and (C) withdrawing the mask from the exposure device into the protective container.

公开(公告)号：DE102004061054A1

公开(公告)日：2006-07-06

申请号：DE102004061054

申请日：2004-12-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUCH JENS ,  STAECKER JENS ,  HOMMEN HEIKO ,  SCHUMACHER KARL ,  SCHIWON ROBERTO ,  SCHMIDT-LANZ MARTIN ,  EFFERENN DIRK

IPC: H01L21/68 ,  G03F7/00

Abstract: The method involves laying of first side of substrate on substrate holder (10), setting of first fluid pressure at the first sub range (26,28,30) of first side of substrate and setting of second fluid pressure at the second sub range of the first side of the substrate. The setting of first fluid pressure and second fluid pressure are implemented after one another. An independent claim is also included for the substrate holding device.