Abstract:
The invention relates to a semiconductor component comprising a plastic housing (41), at least one semiconductor chip (1), and a rewiring layer (8). The rewiring layer (8) is provided with an insulating level (9) and a rewiring level (10). The rewiring level (10) encompasses alternately disposed parallel signal conductors (12) and ground or power supply conductors (13) or exclusively parallel signal conductors (12). In the latter case, a electrically conducting metallic layer that can be connected to ground potential or power supply potential is additionally provided to close the rewiring layer or in the form of a coating.
Abstract:
The module has an inner semiconductor chip stack (2) that exhibits an upper semiconductor chip and a lower semiconductor chip (4). The lower semiconductor chip exhibits a back wiring structure on its back. The lower semiconductor chip is electrically connected with flip chip contacts of the upper semiconductor chip. The back wiring structure stands over bond connections with external contacts of wiring substrates that are connected. An independent claim is also included for a method for manufacturing a semiconductor module.
Abstract:
The FBGA (fine pitch ball grid array) connection device (5) is for face-down integrated circuit chips (6). It has balls of solder (14) acting as electrical contacts on the underside of the chip. The balls are in contact with through-connectors (13) under a copper layer (18) and the chip. The connectors extend through two substrate plates (1,2). A central bonding channel extends through holes in the substrate. It consists of a stepped diameter cast mass of insulating material (16) containing bridging wires (10). The chip is encapsulated in a molding compound (17).