公开(公告)号：DE10301244B4

公开(公告)日：2005-03-17

申请号：DE10301244

申请日：2003-01-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFER HEIMO

IPC: H01L21/223 ,  H01L21/225

公开(公告)号：DE10301244A1

公开(公告)日：2004-08-05

申请号：DE10301244

申请日：2003-01-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOFER HEIMO

IPC: H01L21/223 ,  H01L21/225

公开(公告)号：DE10234996B4

公开(公告)日：2008-01-03

申请号：DE10234996

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  KRUMREY JOACHIM ,  RIEGER WALTER ,  POELZL MARTIN ,  HOFER HEIMO

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

公开(公告)号：DE10234996A1

公开(公告)日：2003-10-16

申请号：DE10234996

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  KRUMREY JOACHIM ,  RIEGER WALTER ,  POELZL MARTIN ,  HOFER HEIMO

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: Production of a transistor arrangement comprises: (a) inserting a trench (6) in a process layer (2) of a semiconductor substrate (7; (b) providing a field electrode (63) and a gate electrode (62) separately from each other and electrically insulated by the process layer; and (c) forming a drift zone (21), a channel zone (22) and a source zone (23) in the process zone. Either the source zone or the channel zone is produced after the trench is formed in the semiconductor substrate. An Independent claim is also included for a trench transistor cell formed in a semiconductor substrate. Preferably after inserting the trench in the process layer, the trench is lined with a first dielectric layer and the field electrode is arranged on sections of the trench lined with the dielectric layer. After producing the field electrode, a gate dielectric layer is formed on sections of the trench wall and a second dielectric layer on the field electrode.