2.
    发明专利
    未知

    公开(公告)号:DE59811228D1

    公开(公告)日:2004-05-27

    申请号:DE59811228

    申请日:1998-09-10

    Abstract: The associative memory has a matrix of memory cells (Z) each having a standard PMOS transistor (T1) and a PMOS transistor (T2) having a floating gate (FG), connected in series between a supply voltage (Vdd) and an output vector bit signal terminal (Yj). An input vector bit signal terminal (Xk) is coupled to the gate of the first transistor and a learning signal terminal is coupled to the gate of the second transistor.

    4.
    发明专利
    未知

    公开(公告)号:DE59712268D1

    公开(公告)日:2005-05-19

    申请号:DE59712268

    申请日:1997-09-25

    Abstract: The circuit comprises a first and a second circuit part (CZ, SZ) which include an evaluation circuit (M1, M2, M3, M4, M7; M1', M2', M3', M4', M7') and elements (M5, M5', M6, M6') for an addition of weighted input sizes, respectively. A partial sum is formed in the first circuit part (CZ), and the partial sum is supplied to at least one of the adding elements of the second circuit part. The partial sum signal controls the channels of at least two neuron MOS transistors (M6, M6') in at least two circuit parts simultaneously over a common polysilicon area.

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