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公开(公告)号：WO0111347A3
公开(公告)日：2001-11-01
申请号：PCT/EP0007804
申请日：2000-08-10
Applicant: INFINEON TECHNOLOGIES AG , GRESCHITZ MANFRED , GRUBER KLAUS , HELMINGER FRANZ , WOLF FRANZ , VON BASSE PAUL WERNER
Inventor： GRESCHITZ MANFRED , GRUBER KLAUS , HELMINGER FRANZ , WOLF FRANZ , VON BASSE PAUL-WERNER
CPC classification number: G01N27/223
Abstract: A semiconductor sensor (2) comprising a capacitively sensitive surface (3) is placed in the area of a gas atmosphere. The semiconductor sensor (2) can be cooled by a cooling device (5). The current temperature of the semiconductor sensor (2) is determined using a cooling temperature sensor (7) as liquid (14) condenses on the capacitively sensitive surface (3). The air humidity of the gas atmosphere is subsequently determined using said current temperature and the temperature of the gas atmosphere.
Abstract translation: 具有电容敏感表面（3）的半导体传感器（2）设置在气体区域中。 半导体传感器（2）可以通过冷却装置（5）冷却。 利用冷却温度传感器（7），确定液体（14）在电容敏感表面（3）上凝结期间半导体传感器（2）的瞬时温度。 这和气体气氛的温度，然后确定气体气氛的空气湿度。
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公开(公告)号：DE59913479D1
公开(公告)日：2006-07-06
申请号：DE59913479
申请日：1999-02-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHMITT-LANDSIEDEL PROF , VON BASSE PAUL-WERNER , THEWES ROLAND DR , BOLLU MICHAEL DR
Abstract: The process involves pre-loading all bit lines to the blocking potential (VB) with the blocking decoder. All outputs of the word decoder are set to a protective voltage (VS) so all memory cells of the cell field are conducting and the blocking potential is carried over to the entire cell field. The blocking decoder is completely decoupled from the cell field so the blocking potential remains stored on the capacitors of the bit lines (BL). The bit decoder is switched on and connects a bit line with the line which holds the information value to be programmed. The information is transferred to the bit line. A word line is selected via the word decoder and set to the programming potential (VP). The memory cell is programmed, at the crossing point of the word line with the previously chosen bit line. Finally the word and bit decoder are switched off.
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公开(公告)号：DE59704333D1
公开(公告)日：2001-09-20
申请号：DE59704333
申请日：1997-11-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HOFMANN FRANZ , WILLER JOSEF , REISINGER HANS , VON BASSE PAUL-WERNER , KRAUTSCHNEIDER WOLFGANG
IPC: H01L21/28 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L27/11517 , H01L27/11568 , H01L29/788 , H01L29/792
Abstract: A number of memory cell lines insulated from one another and that respectively comprise a first doped region and a second doped region between which a gate dielectric, which contains a material with charge carrier traps and a number of gate electrodes. The spacing of neighboring gate electrodes is smaller than the dimensions of the gate electrodes. The information is stored by introduction of charge carriers into the gate dielectric. The gate electrodes are preferably manufactured with the assistance of a spacer technique.
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公开(公告)号：AT357743T
公开(公告)日：2007-04-15
申请号：AT00907422
申请日：2000-01-13
Applicant: INFINEON TECHNOLOGIES AG
Inventor： OPOLKA HEINZ , VON BASSE PAUL-WERNER , SCHEITER THOMAS , GROSSMANN RAINER , PETERS CHRISTIAN , FISCHBACH REINHARD , GAYMANN ANDREAS , ROSTECK THOMAS , SIPRAK DOMAGOJ , SASSE THORSTEN , GOELLNER REINHARD , BIERNER JUSTIN , MELZL MICHAEL , HAMMER KLAUS , WITTE MARKUS
IPC: H01L27/04 , G06K9/00 , H01L21/822 , H01L23/485 , H01L23/60 , H01L27/02 , H01L27/06
Abstract: An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.
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公开(公告)号：ES2173760T3
公开(公告)日：2002-10-16
申请号：ES99952375
申请日：1999-08-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： VON BASSE PAUL-WERNER , WILLER JOSEF , SCHEITER THOMAS , MARKSTEINER STEPHAN
Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.
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Patent Agency Ranking
公开(公告)号：AT214179T
公开(公告)日：2002-03-15
申请号：AT99952375
申请日：1999-08-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： VON BASSE PAUL-WERNER , WILLER JOSEF , SCHEITER THOMAS , MARKSTEINER STEPHAN
Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.
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公开(公告)号：DE50014183D1
公开(公告)日：2007-05-03
申请号：DE50014183
申请日：2000-01-13
Applicant: INFINEON TECHNOLOGIES AG
Inventor： OPOLKA HEINZ , VON BASSE PAUL-WERNER , SCHEITER THOMAS , GROSSMANN RAINER , PETERS CHRISTIAN , FISCHBACH REINHARD , GAYMANN ANDREAS , ROSTECK THOMAS , SIPRAK DOMAGOJ , SASSE THORSTEN , GOELLNER REINHARD , BIERNER JUSTIN , MELZL MICHAEL , HAMMER KLAUS , WITTE MARKUS
IPC: H01L27/02 , G06K9/00 , H01L27/04 , H01L21/822 , H01L23/485 , H01L23/60 , H01L27/06
Abstract: An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.
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公开(公告)号：DE59900961D1
公开(公告)日：2002-04-11
申请号：DE59900961
申请日：1999-08-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： VON BASSE PAUL-WERNER , WILLER JOSEF , SCHEITER THOMAS , MARKSTEINER STEPHAN
Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.
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公开(公告)号：DE59608187D1
公开(公告)日：2001-12-20
申请号：DE59608187
申请日：1996-08-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： VON BASSE PAUL-WERNER , THEWES DR , SCHMITT-LANDSIEDEL DR , BOLLU DR
IPC: G11C11/412 , G11C7/12 , G11C17/12
Abstract: The matrix includes memory cells (1), each memory cell is provided with a MOSFET (10), and arranged in rows (2) and columns (3). The matrix columns lie between two adjacent bit lines (4) and selection lines (5) extend along each row. The selection lines are also connected to the gate of each memory cell transistor along respective line. An auxiliary MOSFET (20) is connected via its source and drain terminals to the adjacent bit lines, or to one bit line and a given potential. The gate electrode of this MOSFET coupled to a common bias line (6), allowing the bit lines to be selectively brought to a given potential.
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公开(公告)号：AT348403T
公开(公告)日：2007-01-15
申请号：AT00960303
申请日：2000-07-24
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROEHL SIEGFRIED , VON BASSE PAUL-WERNER , SCHEITER THOMAS , SASSE THORSTEN , OPOLKA HEINZ
IPC: G01D5/24 , G06K9/00 , H01L21/314 , G06K9/20
Abstract: A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.
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