公开(公告)号：DE19945425A1

公开(公告)日：2001-04-19

申请号：DE19945425

申请日：1999-09-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEIBERG WOLFGANG ,  BAUCH LOTHAR ,  LEHR MATTHIAS UWE ,  LUEKEN ELKE ,  MOLL PETER ,  VOGT MIRKO ,  KIESLICH ALBRECHT

IPC: G03F7/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/321 ,  G03F7/20

Abstract: Structuring a metal layer (M) during semiconductor finishing comprises applying a lacquer layer (L) to a semiconductor substrate; structuring the lacquer layer using lithography and producing an etching mask; and structuring the metal layer using the mask. Initially a hard mask is applied to the metal layer and the lacquer layer is applied to the mask, where the lacquer layer is thin so that only the mask and not the metal layer can be structured with the aid of the lacquer layer. The hard mask is structured to form an etching mask with the aid of the structured lacquer layer. The metal layer is structured with the hard mask as an etching mask. Preferred Features: The hard mask has a first layer (H1) of an oxide, preferably silicon dioxide, and a second layer (H2) to reduce reflection and made of silicon nitride. The metal layer is made of aluminum and/or copper.

公开(公告)号：DE10055290C1

公开(公告)日：2002-07-25

申请号：DE10055290

申请日：2000-11-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HILLIGER ANDREAS ,  STAUB RALF ,  LUEKEN ELKE

IPC: H01L21/768 ,  H01L21/60 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/283

Abstract: The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate ( 1 ) with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate ( 1 ): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area ( 10 ') in at least the area above the contact hole (KL); providing at least three trenches (BG 1 ; BG 2 ; BG 3 ), the first (BG 1 ) of which is arranged next to the contact hole (KL), a second (BG 2 ) is disposed across the contact hole (KL) and a third (BG 3 ) is next to the contact hole (KL). The spacer area ( 10 ') is placed between the first and the second trench (BG 1 ; BG 2 ) and the second and the third trench (BG 2 ; BG 3 ); filling the trenches (BG 1 ; BG 2 ; BG 3 ) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL 1 ; BL 2 ; BL 3 ).