公开(公告)号：DE10061310A1

公开(公告)日：2002-06-27

申请号：DE10061310

申请日：2000-12-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  AHLERS DIRK ,  STENGL JENS-PEER ,  DEBOV GERALD ,  WILLMEROTH ARMIN ,  RUEB MICHAEL ,  MARION MIGUEL CUADRON

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/739

Abstract: The device has an active structure and an edge structure with edge compensation areas and floating edge compensation areas with edge compensation zones. Certain areas are fully depleted of charge carriers before reaching breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. The device has an active structure (AS) with a blocking pn-junction in a semiconducting substrate, a first zone (6) of a first conductor type connected to a first electrode (S) and bounding on a zone of opposite type forming the junction blocking zone (7) also connected to the first electrode, a second zone (1) of first type connected to a second electrode (D) and compensation areas (3') nested between the first and second zones. An edge structure (RS) has a number of first edge compensation areas (2) of the first type and a number of floating edge compensation areas (3) of the second type with edge compensation zones (4) and nested with the first areas so that the second areas are fully depleted of charge carriers before reaching the breakdown voltage. The compensation field strength in the edge structure is lower than that in an active area. Independent claims are also included for the following: a method of manufacturing a semiconducting component.

公开(公告)号：DE50115778D1

公开(公告)日：2011-03-03

申请号：DE50115778

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS DR ,  AHLERS DIRK DR ,  STENGL JENS-PEER ,  DEBOY GERALD DR ,  RUEB MICHAEL DR ,  MARION MIGUEL CUADRON ,  WILLMEROTH ARMIN

IPC: H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78