公开(公告)号：DE10340611B4

公开(公告)日：2007-08-23

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

公开(公告)号：DE102004041921A1

公开(公告)日：2006-03-30

申请号：DE102004041921

申请日：2004-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MORGANA NICOLO ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F7/20

Abstract: Phase-shift mask comprises a mask substrate (58) made from a transparent material having a planar surface and an etched surface (58), first structural elements (50, 53, 54, 55) representing a first part of the pattern, second structural elements (52) representing a second part of the pattern and a boundary line arranged between the planar surface and the etched surface. An independent claim is also included for a method for forming a pattern on the phase-shift mask. Preferred Features: Structural elements formed by trenches partially lie directly on the first structural elements as RIM structures.

公开(公告)号：DE10340611A1

公开(公告)日：2005-03-24

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  G03F1/14

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.