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    Structure for projecting pattern on image surface
    1.
    发明专利
    Structure for projecting pattern on image surface 审中-公开
    用于投影图像图案的结构

    公开(公告)号：JP2006210928A

    公开(公告)日：2006-08-10

    申请号：JP2006019045

    申请日：2006-01-27

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： MOUKARA MOLELA ,  PFORR RAINER ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

    CPC classification number: G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

    Abstract: PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。 解决方案：通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。 该四极照明的四极14a至14d在纵向方向上延伸，并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。 因此，可以提高线间隔平面衍射光栅的结构图像形成的对比度，MEEF和处理窗口。 同时，周边结构（特别是MUX行）的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。 版权所有（C）2006，JPO＆NCIPI

    METHOD FOR DETERMINING THE ABILITY TO PROJECT IMAGES OF INTEGRATED SEMICONDUCTOR SWITCHING CIRCUITS ONTO ALTERNATING PHASE MASKS
    2.
    发明申请
    METHOD FOR DETERMINING THE ABILITY TO PROJECT IMAGES OF INTEGRATED SEMICONDUCTOR SWITCHING CIRCUITS ONTO ALTERNATING PHASE MASKS 审中-公开
    确定集成半导体电路交替相位掩模的可行性的方法

    公开(公告)号：WO0209152A3

    公开(公告)日：2002-08-01

    申请号：PCT/DE0102878

    申请日：2001-07-25

    Applicant: INFINEON TECHNOLOGIES AG ,  LUDWIG BURKHARD ,  MOUKARA MOLELA

    Inventor： LUDWIG BURKHARD ,  MOUKARA MOLELA

    IPC: G03F1/00

    CPC classification number: G03F1/30

    Abstract: The invention relates to a method with which the direct convertibility of integrated semiconductor switching circuits into alternating phase masks can be verified. This ensues by explicitly localizing the phase conflicts occurring in the corresponding layout while solely using the technological demands placed on the design. The set of phase conflicts determined with the aid of this formalism is complete and minimal, and thus proves to be an optimal starting point for methods used in handling conflicts of this type.

    Abstract translation: 描述了一种方法，通过该方法可以检查集成半导体电路在交替相位掩模中的直接可实施性。 这是通过明确定位相应布局中发生的相位冲突来完成的，仅使用对设计的技术要求。 由这种形式主义确定的阶段冲突的集合是完整的和最小的，因此被证明是处理这种冲突的方法的最佳起点。

    ALTERNATING PHASE MASK
    3.
    发明申请
    ALTERNATING PHASE MASK 审中-公开
    交替相位掩模

    公开(公告)号：WO0140868A3

    公开(公告)日：2001-12-06

    申请号：PCT/DE0004136

    申请日：2000-11-22

    Applicant: INFINEON TECHNOLOGIES AG ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    Inventor： FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027

    CPC classification number: G03F1/30

    Abstract: The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).

    Abstract translation: 本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。 在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。 表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。

    6.
    发明专利
    未知

    公开(公告)号：DE10051134B4

    公开(公告)日：2005-05-25

    申请号：DE10051134

    申请日：2000-10-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD

    IPC: G03F1/00 ,  G03F1/14

    Abstract: A method for eliminating phase conflicts that occur in the layout of a phase mask in a localized and automated manner. The method includes a first step in which a set of phase conflicts is completely determined exclusively by using the technical requirements of the design. The first step is an optimum starting point for the following second step for automatically handling and eliminating such conflicts.

    7.
    发明专利
    未知

    公开(公告)号：DE10119145C1

    公开(公告)日：2002-11-21

    申请号：DE10119145

    申请日：2001-04-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

    IPC: G03F1/00 ,  G03F7/20

    Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.

    8.
    发明专利
    未知

    公开(公告)号：DE10340611B4

    公开(公告)日：2007-08-23

    申请号：DE10340611

    申请日：2003-08-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

    IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

    Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

    9.
    发明专利
    未知

    公开(公告)号：DE102005003905B4

    公开(公告)日：2007-04-12

    申请号：DE102005003905

    申请日：2005-01-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: G03F7/20 ,  G03F1/00

    Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

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