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    METHOD FOR THE DETERMINATION OF DATA FOR A MASK AND USE THEREOF OF SAID DATA IN PRODUCTION OF A MASK AND PRODUCTION OF AN INTEGRATED CIRCUIT
    1.
    发明申请
    METHOD FOR THE DETERMINATION OF DATA FOR A MASK AND USE THEREOF OF SAID DATA IN PRODUCTION OF A MASK AND PRODUCTION OF AN INTEGRATED CIRCUIT 审中-公开
    方法将数据确定用于面罩及用于拨打口罩和制造集成电路

    公开(公告)号：WO0116997A3

    公开(公告)日：2001-08-30

    申请号：PCT/EP0008517

    申请日：2000-08-31

    Applicant: INFINEON TECHNOLOGIES AG ,  MEYER DIRK ,  LUDWIG BURKHARD ,  JUNGMANN ANGELIKA

    Inventor： MEYER DIRK ,  LUDWIG BURKHARD ,  JUNGMANN ANGELIKA

    IPC: G06F17/50

    CPC classification number: G06F17/5068

    Abstract: Data pertaining to a layout is described in a hierarchical form by cells and cell instances and is located in a first grid structure. Data for the mask is generated in a second grid structure. For each cell instance, the context is determined in the second grid structure. Cell variants are determined for cell instances with different contexts by rounding and scaling. Said cell variants contain the data for the mask in the second grid structure whereby rounding and scaling are context-dependent.

    Abstract translation: 的布局的数据以分层的形式由细胞和Zellinstanziierungen并且位于第一栅格如前所述。 在第二栅格要产生所述掩模的数据。 给每个在所述第二网格的上下文的是用于确定Zellinstanziierungen。 对于具有不同上下文中，细胞变型中，通过舍入和缩放确定，其中包含在所述第二光栅掩模中的数据，其中所述舍入和缩放执行上下文敏感的Zellinstanziierungen。

    METHOD FOR DETERMINING THE ABILITY TO PROJECT IMAGES OF INTEGRATED SEMICONDUCTOR SWITCHING CIRCUITS ONTO ALTERNATING PHASE MASKS
    2.
    发明申请
    METHOD FOR DETERMINING THE ABILITY TO PROJECT IMAGES OF INTEGRATED SEMICONDUCTOR SWITCHING CIRCUITS ONTO ALTERNATING PHASE MASKS 审中-公开
    确定集成半导体电路交替相位掩模的可行性的方法

    公开(公告)号：WO0209152A3

    公开(公告)日：2002-08-01

    申请号：PCT/DE0102878

    申请日：2001-07-25

    Applicant: INFINEON TECHNOLOGIES AG ,  LUDWIG BURKHARD ,  MOUKARA MOLELA

    Inventor： LUDWIG BURKHARD ,  MOUKARA MOLELA

    IPC: G03F1/00

    CPC classification number: G03F1/30

    Abstract: The invention relates to a method with which the direct convertibility of integrated semiconductor switching circuits into alternating phase masks can be verified. This ensues by explicitly localizing the phase conflicts occurring in the corresponding layout while solely using the technological demands placed on the design. The set of phase conflicts determined with the aid of this formalism is complete and minimal, and thus proves to be an optimal starting point for methods used in handling conflicts of this type.

    Abstract translation: 描述了一种方法，通过该方法可以检查集成半导体电路在交替相位掩模中的直接可实施性。 这是通过明确定位相应布局中发生的相位冲突来完成的，仅使用对设计的技术要求。 由这种形式主义确定的阶段冲突的集合是完整的和最小的，因此被证明是处理这种冲突的方法的最佳起点。

    ALTERNATING PHASE MASK
    3.
    发明申请
    ALTERNATING PHASE MASK 审中-公开
    交替相位掩模

    公开(公告)号：WO0140868A3

    公开(公告)日：2001-12-06

    申请号：PCT/DE0004136

    申请日：2000-11-22

    Applicant: INFINEON TECHNOLOGIES AG ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    Inventor： FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD ,  PFORR RAINER

    IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027

    CPC classification number: G03F1/30

    Abstract: The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).

    Abstract translation: 本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。 在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。 表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。

    4.
    发明专利
    未知

    公开(公告)号：DE10340611B4

    公开(公告)日：2007-08-23

    申请号：DE10340611

    申请日：2003-08-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

    IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

    Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

    Detecting ability to project images of integrated circuits onto alternating phase masks involves identifying phase conflict if contacts with degenerate regions is odd
    5.
    发明专利
    Detecting ability to project images of integrated circuits onto alternating phase masks involves identifying phase conflict if contacts with degenerate regions is odd 未知

    公开(公告)号：DE10057438A1

    公开(公告)日：2002-02-14

    申请号：DE10057438

    申请日：2000-11-20

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD

    IPC: G03F1/00

    Abstract: The method involves determining critical regions, overlap regions between straight sections of critical regions and end regions of straight sections ending inboard of transparent regions, connected areas outside transparent and critical regions and major outer boundaries of these regions, overlapping regions and end regions and identifying a phase conflict if the number of contact sections with degenerate critical regions is odd. The method involves determining critical regions (2) in which any two adjacent transparent regions (1) provided for the phase mask exceed a defined minimum separation distance, determining overlap regions between straight sections of the critical regions and end regions of straight sections ending inboard of transparent regions, determining connected areas outside the transparent and critical regions and the major outer boundaries (4) of these regions, overlapping regions and end regions, and determining the number of contact sections with degenerate critical regions and identifying a phase conflict if the number is odd.

    9.
    发明专利
    未知

    公开(公告)号：DE10051134B4

    公开(公告)日：2005-05-25

    申请号：DE10051134

    申请日：2000-10-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD

    IPC: G03F1/00 ,  G03F1/14

    Abstract: A method for eliminating phase conflicts that occur in the layout of a phase mask in a localized and automated manner. The method includes a first step in which a set of phase conflicts is completely determined exclusively by using the technical requirements of the design. The first step is an optimum starting point for the following second step for automatically handling and eliminating such conflicts.

    10.
    发明专利
    未知

    公开(公告)号：DE10119145C1

    公开(公告)日：2002-11-21

    申请号：DE10119145

    申请日：2001-04-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

    IPC: G03F1/00 ,  G03F7/20

    Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.

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