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    DEVICE FOR MECHANICALLY REGULATING AN ELECTRICAL CAPACITANCE, AND METHOD FOR MAKING SAME
    2.
    发明申请
    DEVICE FOR MECHANICALLY REGULATING AN ELECTRICAL CAPACITANCE, AND METHOD FOR MAKING SAME 审中-公开
    机械装置用于控制生产同样的电容量和方法

    公开(公告)号：WO03025958A3

    公开(公告)日：2003-09-18

    申请号：PCT/EP0208090

    申请日：2002-07-19

    Applicant: INFINEON TECHNOLOGIES AG ,  KAPELS HERGEN ,  OPPERMANN KLAUS-GUENTER

    Inventor： KAPELS HERGEN ,  OPPERMANN KLAUS-GUENTER

    IPC: H01G5/16

    CPC classification number: H01G5/16

    Abstract: The invention concerns a device for mechanically regulating an electrical capacitance. Said device comprises a first electrode structure (10) including first (16) and second (24) surfaces, the first surface (16) having at least a projecting portion (18a 18d). The device also comprises a second electrode structure (12), spaced apart from the first electrode structure (10) and including at least a recess (20a 20d) arranged in such a way that the projecting portion(s) (18a 18d) of the first electrode structure (10) project(s) into said recess, an electrical capacitance being determined between the opposite surface zones of the first (10) and of the second (12) electrode structures. A third electrode structure (14) for regulating the electrical capacitance is arranged between the first (10) and the second (12) electrode structures . Said third electrode structure (14) is spaced apart from the first electrode structure (10) and located opposite said second surface (24). The first electrode structure (10) is configured to be freely mobile relative to the second (12) and third (14) electrode structures. Thus, when an electric voltage is applied between the first (10) and the third (14) electrode structures, the electrical capacitance can be regulated, by modifying the distance separating the first (10) and the second (12) electrode structures.

    Abstract translation: 本发明提供一种装置，用于机械地控制电气的电容，其包括具有第一（16）的第一电极结构（10）和第二（24）表面，所述第一表面（16）的至少一个突起（18A - 18D）具有 ， 该设备还包括所述第一电极结构（10）和具有至少一个凹部（20A - 20D）的第二电极结构（12） - 第一个电极结构中的哪一个布置成使得所述至少一个凸起（18D 18A） （10）突出到相同的，因而第一（10）相对的表面区域和第二（12）的电极结构之间的电容量是固定的。 第三电极结构（14）被设置用于控制所述电第一之间（10）和第二（12）的电极结构的电容，其中所述第三电极结构（14）到第一电极结构（10）间隔开并相对的第二表面（24） ， 所述第一电极结构（10）相对于所述第二（12）和第三（14）的电极结构自由地设计成可移动，以使得由所述第一之间的第一（10）和第三之间施加电压（14）的电极结构中，电电容（ 10）和（12）的电极结构是通过改变第一（10之间的距离控制的）和第二（12）的电极结构的第二。

    DEFORMATION MEASURING DEVICE
    3.
    发明申请
    DEFORMATION MEASURING DEVICE 审中-公开
    整形刀

    公开(公告)号：WO0026608A3

    公开(公告)日：2000-07-27

    申请号：PCT/DE9903543

    申请日：1999-11-04

    Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  HIEROLD CHRISTOFER ,  OPPERMANN KLAUS GUENTER ,  GLEHR MANFRED

    Inventor： AIGNER ROBERT ,  HIEROLD CHRISTOFER ,  OPPERMANN KLAUS-GUENTER ,  GLEHR MANFRED

    IPC: G01B7/16 ,  G01N27/22 ,  G01L5/00

    CPC classification number: G01B7/22

    Abstract: The invention relates to a micromechanical sensor comprising electrodes (1, 2) which are arranged on a substrate, and comprising electrode bars (A) made of silicon that can move with regard to the electrodes. A deformation of the substrate is measured by determining the differential changes in capacity of these electrode bars in comparison to the adjacently arranged electrodes. Two groups of electrode bars are preferably used which are interlocked with one another in an alternating comb-like manner, which, separate from one another, are interconnected at the ends thereof in an electrically conductive manner, and which are anchored on the substrate.

    Abstract translation: 微型机械传感器，其具有布置在基板上的电极（1,2）以及由硅制成的电极棒（A），所述电极棒可相对于电极移动。 通过确定这些电极棒相对于与其相邻布置的电极的差分电容变化来检测衬底的变形。 优选地，使用两组梳状互相啮合的电极棒，它们彼此分开并且在其端部导电连接并且锚定在衬底上。

    Verfahren zum Entwickeln eines Photolacks
    4.
    发明专利
    Verfahren zum Entwickeln eines Photolacks 未知

    公开(公告)号：DE102006030359B4

    公开(公告)日：2011-07-07

    申请号：DE102006030359

    申请日：2006-06-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： OPPERMANN KLAUS-GUENTER ,  FRANOSCH MARTIN

    IPC: G03F7/30 ,  G03F7/32 ,  G03F7/36 ,  G03F7/42

    Abstract: Verfahren zum Entwickeln eines Photolacks (13), mit folgenden Schritten: Anwenden (S9) eines ersten Entwicklers auf den Photolack (13), um nicht-vernetzte Bereiche (25) des Photolacks (13) zu entfernen; Anwenden (S11) eines zweiten Entwicklers auf den Photolack (13), um verbleibende nicht-vernetzte Bereiche (25) des Photolacks (13) zu entfernen, wobei sich der erste Entwickler und der zweite Entwickler in ihrer Zusammensetzung unterscheiden; und Beschießen oder In-Kontakt-Bringen des Photolacks (13) mit einem Sauerstoffplasma nach dem Schritt (S11) des Anwendens des zweiten Entwicklers.

    9.
    发明专利
    未知

    公开(公告)号：DE102008012834A1

    公开(公告)日：2008-09-25

    申请号：DE102008012834

    申请日：2008-03-06

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FRANOSCH MARTIN ,  HANDTMANN MARTIN ,  OPPERMANN KLAUS-GUENTER

    IPC: H01L23/15 ,  H01L21/58

    Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

    10.
    发明专利
    未知

    公开(公告)号：DE19943143B4

    公开(公告)日：2008-04-24

    申请号：DE19943143

    申请日：1999-09-09

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： TIHANYI JENOE ,  OPPERMANN KLAUS-GUENTER

    IPC: H01L29/06 ,  H01L21/328 ,  H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78

    Abstract: A semiconductor component includes a semiconductor body of a first conductivity type which accommodates a space charge region. Semiconductor regions of a second conductivity type are disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes. A cell array is disposed under one of the electrodes in the semiconductor body. At least some of the semiconductor regions of the second conductivity type are connected to the cell array via filiform semiconductor zones of the second conductivity type in order to expedite switching processes. A method for fabricating such a semiconductor component is also provided.

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