公开(公告)号：DE102005013300B4

公开(公告)日：2010-11-11

申请号：DE102005013300

申请日：2005-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

IPC: B81C1/00 ,  B29C59/02 ,  H03H3/00

公开(公告)号：DE10316777B4

公开(公告)日：2005-11-24

申请号：DE10316777

申请日：2003-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  FRANOSCH MARTIN ,  MECKES ANDREAS

IPC: H03H3/02 ,  H03H3/08 ,  H03H9/10 ,  H01L21/56 ,  B81B3/00 ,  B81C1/00 ,  H03H3/007

公开(公告)号：DE10246101A1

公开(公告)日：2004-04-15

申请号：DE10246101

申请日：2002-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DAECHE FRANK ,  WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  EHRLER GUENTER ,  MECKES ANDREAS

IPC: B81B7/00 ,  B81C3/00 ,  H01L23/04

Abstract: Production of a housing for a chip with a micro-mechanical structure used in the production of micro-mechanical switches comprises preparing a base having a first photolithographic structurable layer, structuring and further processing. Production of a housing for a chip with a micro-mechanical structure (22) comprises preparing a first base having a first photolithographic structurable layer, structuring the first layer to form a lid for the micro-mechanical structure, preparing a chip with the micro-mechanical structure arranged on a main surface of the chip between first contact elements, applying a second photolithographic structurable layer (28) on a partial region of the main surface of the chip, structuring the second layer to form a recess (32) surrounded by a wall (30) in the second layer and to expose the contact elements, joining the first base and the chip, removing the first base to obtain a chip with a hollow chamber, joining the second base and the chip so that the first contact elements are connected to the second base via a conducting structure, and removing the second base to expose the conducting structure.

公开(公告)号：DE102006005994A1

公开(公告)日：2007-08-16

申请号：DE102006005994

申请日：2006-02-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  MECKES ANDREAS ,  FUERGUT EDWARD

IPC: H01L23/053 ,  B81C3/00 ,  H01L21/50 ,  H01L23/58

Abstract: A semiconductor (1) comprises a semiconductor substrate having an active area region (5); a covering (7) configured to protect the active area region; a carrier (11); an interspace (12) between the carrier and the covering, filled with an underfiller material. Independent claims are included for the following: (1) producing a semiconductor wafer having several semiconductor chip positions; (2) producing a panel having several semiconductor component positions; and (3) producing several semiconductor components.

公开(公告)号：DE10310617B4

公开(公告)日：2006-09-21

申请号：DE10310617

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  AUBURGER ALBERT ,  THEUSS HORST ,  DAECHE FRANK ,  EHRLER GUENTER ,  MECKES ANDREAS ,  AIGNER ROBERT

IPC: H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H03H9/05

Abstract: An electronic device can include a top side with circuit structures. The circuit structures form the bottom region of a cavity. Each cavity can be surrounded by a cavity frame made of plastic and can have a cavity cover made of semiconductor material.

公开(公告)号：DE102004004476B3

公开(公告)日：2005-07-07

申请号：DE102004004476

申请日：2004-01-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  MECKES ANDREAS ,  FRANOSCH MARTIN

IPC: B81B7/00 ,  H01L21/50 ,  H01L21/68 ,  H03H3/08 ,  B81C3/00 ,  H03H9/10

Abstract: A process for applying resin covers (3) to a system wafer (5) with active components (8), comprises using a carrier (7). The wafer and carrier are prepared, and the cover is applied to the carrier via connection layer (6). The carrier is located on the wafer, afterwhich the carrier and the connection layer are removed mechanically. The semiconductor chips are then separated out. The carrier is flexible.

公开(公告)号：DE10256116A1

公开(公告)日：2004-07-08

申请号：DE10256116

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUS HORST ,  WEBER MICHAEL ,  MECKES ANDREAS

IPC: B81B3/00 ,  B81C1/00 ,  H01L23/50 ,  B81C5/00 ,  B81B1/00

Abstract: The method involves producing an active area (5) in the positions of semiconductor chips on an active top side (4) of the wafer, and applying contact surfaces (6) outside the active area. A sacrificial layer comprising insulating material is applied to the active area, leaving openings in the sacrificial layer at the edges of the active area. A conductive material is applied, the sacrificial layer removed, and a plastics layer applied before applying external contacts and separating the wafer into individual electronic devices. Independent claims are included for an electronic device; and a semiconductor wafer.

公开(公告)号：DE10315068B3

公开(公告)日：2004-08-05

申请号：DE10315068

申请日：2003-04-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

IPC: B81C1/00 ,  H01L21/68 ,  H01L21/306 ,  H01L21/311 ,  H01L21/58

Abstract: The sacrificial layer removal method has microchannels formed in at least one structured layer between a first substrate and a second substrate provided with a sacrificial layer, with full or partial insertion of the substrate arrangement (2) in a housing (1) having an entry opening (10) at one end and an exit opening (11) at the opposite end. A seal is provided between the exit opening and the substrate arrangement and the entry opening is supplied with a sacrificial layer removal medium, the microchannels used for supplying it to the sacrificial layer. An independent claim for a sacrificial layer removal device is also included.

公开(公告)号：DE19940581C2

公开(公告)日：2001-07-26

申请号：DE19940581

申请日：1999-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  KAPELS HERGEN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

IPC: B81B3/00 ,  B81B7/02 ,  H01L27/06 ,  H01L21/822 ,  H01L21/8232 ,  B81C1/00

Abstract: The manufacturing method has at least one electronic component (7) formed in the surface of a semiconductor body (1), before forming a recess in the surface of the latter, by selective removal of semiconductor material and formation of a layer (10) in this recess, which is structured to provide the micromechanical sensor component. The electronic component can be covered by a protective layer (9) before formation of the recess, with the layer provided in the recess formed from poly-silicon.

公开(公告)号：DE19940581A1

公开(公告)日：2001-04-19

申请号：DE19940581

申请日：1999-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  KAPELS HERGEN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

IPC: B81B3/00 ,  B81B7/02 ,  H01L27/06 ,  H01L21/822 ,  H01L21/8232 ,  B81C1/00

Abstract: The manufacturing method has at least one electronic component (7) formed in the surface of a semiconductor body (1), before forming a recess in the surface of the latter, by selective removal of semiconductor material and formation of a layer (10) in this recess, which is structured to provide the micromechanical sensor component. The electronic component can be covered by a protective layer (9) before formation of the recess, with the layer provided in the recess formed from poly-silicon.