Abstract:
The invention concerns a device for mechanically regulating an electrical capacitance. Said device comprises a first electrode structure (10) including first (16) and second (24) surfaces, the first surface (16) having at least a projecting portion (18a 18d). The device also comprises a second electrode structure (12), spaced apart from the first electrode structure (10) and including at least a recess (20a 20d) arranged in such a way that the projecting portion(s) (18a 18d) of the first electrode structure (10) project(s) into said recess, an electrical capacitance being determined between the opposite surface zones of the first (10) and of the second (12) electrode structures. A third electrode structure (14) for regulating the electrical capacitance is arranged between the first (10) and the second (12) electrode structures . Said third electrode structure (14) is spaced apart from the first electrode structure (10) and located opposite said second surface (24). The first electrode structure (10) is configured to be freely mobile relative to the second (12) and third (14) electrode structures. Thus, when an electric voltage is applied between the first (10) and the third (14) electrode structures, the electrical capacitance can be regulated, by modifying the distance separating the first (10) and the second (12) electrode structures.
Abstract:
Etching openings are provided in a membrane above an etched-out cavity, only at a distance of at most one tenth of the diameter of the member away from the edge of the cavity. For production, a poly layer is applied to a sacrificial layer composed of SiO2 and is provided with rows of etching holes, through which channels are etched out in the sacrificial layer. The poly layer is oxidized and is made smooth by means of a planarization layer. Etching holes are produced in the edge region of the membrane layer. The sacrificial layer is removed over the entire area of the cavity which is to be produced, with the etching medium propagating sufficiently quickly through the channels.
Abstract:
The invention concerns a device for mechanically regulating an electrical capacitance. Said device comprises a first electrode structure (10) including first (16) and second (24) surfaces, the first surface (16) having at least a projecting portion (18a 18d). The device also comprises a second electrode structure (12), spaced apart from the first electrode structure (10) and including at least a recess (20a 20d) arranged in such a way that the projecting portion(s) (18a 18d) of the first electrode structure (10) project(s) into said recess, an electrical capacitance being determined between the opposite surface zones of the first (10) and of the second (12) electrode structures. A third electrode structure (14) for regulating the electrical capacitance is arranged between the first (10) and the second (12) electrode structures . Said third electrode structure (14) is spaced apart from the first electrode structure (10) and located opposite said second surface (24). The first electrode structure (10) is configured to be freely mobile relative to the second (12) and third (14) electrode structures. Thus, when an electric voltage is applied between the first (10) and the third (14) electrode structures, the electrical capacitance can be regulated, by modifying the distance separating the first (10) and the second (12) electrode structures.
Abstract:
Production of a micromechanical component (9) having a moving structure (3) comprises: preparing the component with the structure embedded in a layer (2); partially exposing the embedded structure by forming a recess in the layer to produce a fixed region; fixing the structure opposite the fixed region using a lacquer (7); removing the remaining layer in the region of the moving structure; inserting the component into a receiver; introducing a solvent into the receiver to remove the lacquer; introducing a liquid soluble in the solvent into the receiver; heating the receiver above the critical temperature of the liquid to convert it into a gas phase; and removing the gas with the solvent from the receiver. Preferred Features: The layer (2) is made from silicon dioxide. The step of partially exposing the embedded structure is carried out by back etching. The lacquer is a photolacquer. The solvent is an organic solvent. The liquid which is converted into the gas phase is CO2 or a halogen-carbon compound, preferably CClF3.
Abstract:
Sensor comprises a MIS transistor with first (S11) and second (S12) drain source regions with a channel region between the two. The first MIS transistor is controlled using a gate electrode (G1/G2) that is arranged so that it can be moved relative to the channel region. The distance variation between channel region and gate electrodes is caused by acceleration and is used to measure it. An Independent claim is made for a method for manufacturing a micromechanical acceleration sensor using MIS transistors.
Abstract:
The manufacturing method has at least one electronic component (7) formed in the surface of a semiconductor body (1), before forming a recess in the surface of the latter, by selective removal of semiconductor material and formation of a layer (10) in this recess, which is structured to provide the micromechanical sensor component. The electronic component can be covered by a protective layer (9) before formation of the recess, with the layer provided in the recess formed from poly-silicon.