公开(公告)号：JP2002313717A

公开(公告)日：2002-10-25

申请号：JP2002062283

申请日：2002-03-07

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GENZ OLIVER ,  PREUNINGER JURGEN ,  GERHARD KUNKEL

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a patterning process and a patterning apparatus which avoid restrictions in mask inspections and problems at alignment and compensates the line shortening, the problem in the prior part. SOLUTION: The process comprises a step of covering a wafer surface with a mask and a step of transferring a mask pattern to the wafer surface with a specified magnification. In the step of transferring the mask pattern the wafer is moved horizontally at a first velocity, while the mask is moved horizontally at a second velocity to expose a part of the wafer surface wherein the first and second velocities differ from each other and the ratio of the first velocity to the second velocity is different from the magnifying power.

公开(公告)号：DE10239488A1

公开(公告)日：2003-07-03

申请号：DE10239488

申请日：2002-08-28

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： KUDELKA STEPHAN P ,  TEWS HELMUT HORST ,  GENZ OLIVER

IPC: H01L21/8242

Abstract: Production of a trench dynamic random access memory cell includes: forming pad nitride on substrate and ion etching trench; depositing nitride layer in trench; filling trench with polysilicon filling; back etching filling; forming nitrided oxide collar or oxide layer; ion etching; dissolving filling trench and nitride etching; extending trench; and forming trenched plate on trench side walls. Production of a trench dynamic random access memory (DRAM) cell in a semiconductor substrate comprises: forming a pad nitride on the surface of the substrate and ion etching a trench vertically to a first depth; depositing a nitride layer (20) in the trench; filling the trench with a polysilicon filling (21); back etching the filling to a collar depth; oxidizing to convert the exposed nitride layer into a nitrided oxide collar or depositing an oxide layer on the nitride layer; ion etching to open the base oxide; dissolving the filling trench and nitride etching selectively to the oxide; extending the trench in the horizontal direction by etching the lower trench side walls and the base during masking of the upper side walls; forming a trenched plate on the base of the trench side walls; forming a node dielectric in the trench; filling the trench with a polysilicon filling; back etching the filling; depositing a collar oxide; ion etching to open the base; filling the trench with a polymer filling; and chemical-mechanical polishing the substrate. Preferred Features: The pad nitride is silicon nitride. The trench filling is amorphous silicon, silicon-germanium or germanium.

公开(公告)号：DE10207817A1

公开(公告)日：2003-05-28

申请号：DE10207817

申请日：2002-02-25

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GENZ OLIVER ,  PREUNINGER JUERGEN ,  KUNKEL GERHARD

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/8242

Abstract: An apparatus (100) for patterning the surface of a semiconductor wafer (130). A stage (148) is coupled to a motor (150) that is adapted to move the stage (148) and a semiconductor wafer (130) in a horizontal direction at a first speed A. A mask (140) is disposed above the semiconductor wafer (130), the mask (140) being coupled to a motor (142) that is adapted to move the mask (140) in a horizontal direction at a second speed B. The ratio of the first and second speeds is different than the magnification factor, which may be other than 1:1 if a lens (120) is used. The mask (140) and the wafer (130) may be moved in the same horizontal direction simultaneously during the exposure process at different speeds B and A, respectively, to provide a magnification or demagnification of the mask (140) pattern onto the wafer (130) surface.