公开(公告)号：JP2000243213A

公开(公告)日：2000-09-08

申请号：JP2000046289

申请日：2000-02-23

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： WEBER STEFAN J ,  IGGULDEN ROY ,  NARAYAN CHANDRASEKHAR ,  BRINTZINGER AXEL CHRISTOPH ,  HOINKIS MARK ,  VAN DEN BERG ROBERT

IPC: H01H85/00 ,  H01H69/02 ,  H01L21/82 ,  H01L23/525

Abstract: PROBLEM TO BE SOLVED: To provide a method for shrinking an area for a fuse to occupy on a semiconductor tip, and to adjust a fuse resistance relative to a fuse of a semiconductor device. SOLUTION: A fuse for a semiconductor is formed, so as to have a substrate 12 having a conductive passage disposed on its surface, a dielectric layer 14 disposed on the substrate, and a vertical fuse 110 vertically disposed on the surface. The vertical fuse penetrates through the dielectric layer 14 and is connected to the conductive passage. The vertical fuse also has a hole 108, a liner material is disposed on its vertical surface, and the fuse is cut off with fusing of the liner material along the vertical surface.

公开(公告)号：DE60034611T2

公开(公告)日：2008-01-31

申请号：DE60034611

申请日：2000-02-04

Applicant: QIMONDA AG ,  IBM

Inventor： WEBER STEFAN J ,  IGGULDEN ROY ,  NARAYAN CHANDRASEKHAR ,  BRINTZINGER AXEL CHRISTOPH ,  HOINKIS MARK ,  VAN DEN BERG ROBERT

IPC: H01H85/00 ,  H01H69/02 ,  H01L23/525 ,  H01L21/82

Abstract: A fuse for semiconductor devices in accordance with the present invention includes a substrate having a conductive path disposed on a surface thereof, a dielectric layer disposed on the substrate and a vertical fuse disposed perpendicularly to the surface through the dielectric layer and connecting to the conductive path, the vertical fuse forming a cavity having a liner material disposed along vertical surfaces of the cavity, the vertical surfaces being melted to blow the fuse. Methods for fabrication of the vertical fuse are also included.

公开(公告)号：DE60034611D1

公开(公告)日：2007-06-14

申请号：DE60034611

申请日：2000-02-04

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： WEBER STEFAN J ,  IGGULDEN ROY ,  NARAYAN CHANDRASEKHAR ,  BRINTZINGER AXEL CHRISTOPH ,  HOINKIS MARK ,  VAN DEN BERG ROBERT

IPC: H01H85/00 ,  H01H69/02 ,  H01L23/525 ,  H01L21/82

Abstract: A fuse for semiconductor devices in accordance with the present invention includes a substrate having a conductive path disposed on a surface thereof, a dielectric layer disposed on the substrate and a vertical fuse disposed perpendicularly to the surface through the dielectric layer and connecting to the conductive path, the vertical fuse forming a cavity having a liner material disposed along vertical surfaces of the cavity, the vertical surfaces being melted to blow the fuse. Methods for fabrication of the vertical fuse are also included.